SZA3044Z 2.7GHz to 3.8GHz 5V 1W SZA3044Z 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMDs SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor P =31dBm at 5V 1dB (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT 802.11a 54Mb/s 2.5% EVM Per- amplifier is made with InGaP on GaAs device technology and fabricated with formance MOCVD for an ideal combination of low cost and high reliability. This product is spe- P =24dBm, VCC=5V, 340mA, cifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to OUT PAE 14.5% 3.8GHz bands. It can run from a 3V to 6V supply. Optimized on-chip impedance matching circuitry provides a 50 nominal RF input impedance. The external out- P =25dBm, VCC=6V, 365mA, OUT put match and bias adjustability allows load line optimization for other applications PAE 14.5% or over narrower bands. It features an output power detector, On-Chip Output Power Detector Optimum Technology on/off power control and high RF overdrive robustness. This Matching Applied Robust - Survives RF Input product is available in a RoHS Compliant and Green package Power=+15dBm GaAs HBT with matte tin finish, designated by the Z package suffix. GaAs MESFET On Chip ESD Protection Class 2 (2000V) InGaP HBT SiGe BiCMOS Power Up/Down Control <1s Si BiCMOS Pin Compatible With SZA-2044 and SZA-5044 SiGe HBT GaAs pHEMT Applications Si CMOS Si BJT 802.16 WiMAX Driver or Output Stage GaN HEMT Fixed Wireless, WLL RF MEMS Specification Parameter Unit Condition Min. Typ. Max. Frequency of Operation 2700 3800 MHz 1 29.5 31.0 dBm 3.3GHz Output Power at 1dB Compression 28.5 30.0 dBm 3.6GHz Small Signal Gain 22.0 24.0 26.0 dB 3.4GHz 22.0 24.0 26.0 dB 3.6GHz Output power 24.0 dBm 3.4GHz, 2.5% EVM 802.11a 54Mb/s Third Order Suppression -38.5 -35.5 dBc 3.6GHz, P =20dBm per tone OUT Noise Figure 5.0 dB 3.6GHz Worst Case Input Return Loss 12.0 15.0 dB 3.3GHz to 3.8GHz Worst Case Output Return Loss 7.0 10.0 dB 3.3GHz to 3.6GHz Quiescent Current 170 205 240 mA V =5V CC Power Up Control Current 2.7 mA V =5V, I +I PC VPC1 VPC2 Off V Leakage Current 10.0 100.0 uA V =0V CC PC Thermal Resistance 22 C/W junction - lead Test Conditions: Z =50 , V =5V, I =205mA, T =30C 0 CC Q BP RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS150303 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 11SZA3044Z Absolute Maximum Ratings Parameter Rating Unit Caution ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may VC2 Collector Bias Current (I)600 mA VC2 cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- VC1 Collector Bias Current (I)300 mA VC1 mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Device Voltage (V ), No RF drive 7 V D RoHS status based on EUDirective2002/95/EC (at time of this document revision). Power Dissipation 3.5 W The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Max RF Input Power for 50 output 15 dBm infringement of patents, or other rights of third parties, resulting from its use. No load license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Max RF Input Power for 10:1 VSWR 8dBm cation circuitry and specifications at any time without prior notice. RF out load Storage Temp Range -40 to +150 C ESD Rating - Human Body Model 2000 V (HBM) Moisture Sensitivity Level MSL-1 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , and T =T D D J L TH j-l L LEAD Recommended Operating Condition Specification Parameter Unit Min. Typ. Max. T -40 +100C CASE 6 +165 C T for >10 hours MTTF* J Supply Voltage 3 6 V *Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Typical Performance, 3.2GHz to 3.6GHz Application Circuit (V =5V, I =220mA, 802.11a 54Mb/s 64QAM) CC CQ Parameter Units 3.2GHz 3.3GHz 3.4GHz 3.5GHz 3.6GHz 3.7GHz Gain P = 24dBm dB 25.7 25.6 25.5 25.2 24.3 23.4 OUT P dBm 31.0 31.0 30.5 30.0 30.0 29.5 1dB P 2.5% EVM* dBm 23.5 24.0 24.0 23.5 23.0 23.0 OUT I P 2.5% EVM* mA 331 340 339 330 327 325 OUT *See 3.0GHz to 3.6GHz Application Circuit Typical Performance, 3.2GHz to 3.6GHz 6V Application Circuit (V =6V, I =220mA, 802.11a 54Mb/s 64QAM) CC CQ Parameter Units 3.3GHz 3.4GHz 3.5GHz 3.6GHz 3.7GHz Gain P = 24dBm dB 25.6 25.6 25.1 24.1 23.2 OUT P dBm 32.5 32.0 32.0 31.5 31.5 1dB P 2.5% EVM* dBm 25.0 25.0 25.0 24.5 24.5 OUT I P 2.5% EVM* mA 370 365 363 356 355 OUT *Contact Applications Engineering for details about application circuit 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 11 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS150303