SZM-2066Z 2.4GHz to 2.7GHz 2W Power Ampli- fier SZM-2066Z 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMDs SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor P = 33.5dBm at 5V 1dB (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip Three Stages of Gain:37dB module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. 802.11g 54Mb/s Class AB Per- formance This product is specifically designed as a final or driver stage for 802.16 and 802.11b/g equipment in the 2.4GHz to 2.7GHz bands. It can run from a 3V to 5V P =26dBm at 2.5% EVM, VCC OUT supply. The external output match and bias adjustability allows load line optimiza- 5V, 690mA tion for other applications or over narrower bands. It features an output power Active Bias with Adjustable Cur- detector, on/off power control and high RF overdrive robust- Optimum Technology rent Matching Applied ness. A 20dB step attenuator feature can be utilized by switch- GaAs HBT ing the second stage Power up/down control. On-Chip Output Power Detector GaAs MESFET Vcc = 5V Low Thermal Resistance InGaP HBT Power Up/Down Control <1s SiGe BiCMOS Si BiCMOS Attenuator Step 20dB at SiGe HBT V =0V PC2 GaAs pHEMT RFIN RFOUT Si CMOS Applications Si BJT Stage 1 Stage 2 Stage 3 Bias Bias Bias 802.16 WiMAX Driver or Output GaN HEMT Vbias = 5V Stage InP HBT Pow er 802.11b/g WiFi, WiFi RF MEMS Pow er Detector Up/Dow n LDMOS Control Specification Parameter Unit Condition Min. Typ. Max. Frequency of Operation 2500 2700 MHz Output Power at 1dB Compression 32.0 33.5 dBm 2.7GHz Small Signal Gain 32.2 33.7 dB 2.7GHz EVM 2.5 % 2.7GHz, 802.11g 54Mb/s at P =26dBm OUT Third Order Supression -45.0 -40.0 dBc 2.7GHz, P =23dBm per tone OUT Noise Figure 7.7 dB 2.7GHz Worst Case Input Return Loss 7.5 10.5 dB 2.5GHz to 2.7GHz Worst Case Output Return Loss 12.5 15.5 dB 2.5GHz to 2.7GHz Output Voltage Range 0.9 to 1.8 V P =10dBm to 33dBm OUT Quiescent Current 454 583 659 mA V =5V CC Power Up Control Current 4.0 mA V =5V, I +I +I PC VPC1 VPC2 VPC3 VCC Leakage Current 100 AV =5V, V =0V CC PC Thermal Resistance 12.0 C/W junction - lead Test Conditions: Z =50 , V =5V, I =583mA, T =30C 0 CC Q BP RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110620 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 18SZM-2066Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may VC3 Collector Bias Current (I ) 1500 mA VC3 cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- VC2 Collector Bias Current (I ) 500 mA VC2 mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. VC1 Collector Bias Current (I)150 mA VC1 RoHS status based on EUDirective2002/95/EC (at time of this document revision). ****Device Voltage (V)9.0 V D The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Power Dissipation 6 W infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of ***Max CW RF output Power for 30 dBm RFMD. RFMD reserves the right to change component circuitry, recommended appli- 50W continuous long term oper- cation circuitry and specifications at any time without prior notice. ation Max CW RF output Power for 50 26 dBm output load Max CW RF Input Power for 10:1 5dBm VSWR out load Storage Temperature Range -40 to +150 C Operating Temp Range (T ) -40 to +85 C L Operating Junction Temperature (T)+150 C J ESD Rating - Human Body Model 1000 V ***With specified application circuit ****No RF Drive Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , D D J L TH j-l Typical Performance with appropriate app circuit (V =5V, I =583mA, *802.11g 54Mb/s 64QAM) CC CQ Parameter Unit **2.4 2.5 2.6 2.7 GHz GHz GHz GHz Gain P =26dBm dB 37.5 36.9 36.5 34.6 OUT P1dB dBm 34.633.533.533.9 P 2.5% EVM* dBm 27.0 26.0 26.0 26.5 OUT Current P 2.5% EVM* mA 703 710 700 712 OUT Input Return Loss dB -12.1 -11.5 -10.8 -10.5 Output Return Loss dB -27 -15.6 -28 -18.5 Step Attentuation (V =0V) dB 27 27 26 25 PC2 Test Conditions: **Measured with 2.4GHz to 2.5GHz Application circuit. Simplified Device Schematic 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 18 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110620