SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier SBF4089Z DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMDs SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran- IP =42dBm at 240MHz 3 sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech- Stable Gain Over nology provides broadband performance up to 0.5GHz with excellent thermal Temperature performance. The heterojunction increases breakdown voltage and minimizes leak- age current between junctions. Cancellation of emitter junction non-linearities Robust 1000V ESD, Class 1C results in higher suppression of intermodulation products. Only a single positive Operates From Single Supply supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke Low Thermal Resistance are required for operation. Optimum Technology Applications Matching Applied S-Parameters vs Frequency +25c GaAs HBT 16 0 Receiver IF Amplifier s21 GaAs MESFET 15.5 s11 Cellular, PCS, GSM, UMTS InGaP HBT 15 -5 s22 SiGe BiCMOS 14.5 PA Driver Amplifier 14 -10 Si BiCMOS Wireless Data, Satellite 13.5 SiGe HBT Terminals 13 -15 GaAs pHEMT 12.5 Si CMOS 12 -20 Si BJT 11.5 GaN HEMT 11 -25 0 100 200 300 400 500 600 700 800 900 InP HBT Freq RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 14.9 dB 70MHz 13.3 14.8 16.3 dB 240MHz 13.2 14.7 16.2 dB 500MHz Output Power at 1dB Compression 20.1 dBm 70MHz 20.1 dBm 240MHz 18.4 19.9 dBm 400MHz Output Third Order Intercept Point 40.0 dBm 70MHz 42.0 dBm 240MHz 39.0 41.0 dBm 400MHz Input Return Loss 13.0 17.0 dB 500MHz Output Return Loss 12.0 16.0 dB 500MHz Noise Figure 3.3 4.3 dB 500MHz Device Operating Voltage 4.5 4.9 5.3 V Device Operating Current 82 90 98 mA Thermal Resistance 43 C/W junction to lead Test Conditions: V =8V, I =90mA Typ., T =25C. OIP Tone Spacing=1MHz, P per tone=0dBm, R =33 . Data with Application Circuit. S D L 3 OUT BIAS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS111011 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 8 Gain(dB) IRL,ORL(dB)SBF4089Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Device Current (I)150 mA D Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Device Voltage (V)6 V D tions is not implied. The information in this publication is believed to be accurate and reliable. However, no Max Operating Dissipated Power 0.8 W responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Max Input Power Rating 15 dBm license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Junction Temp (T)+150 C cation circuitry and specifications at any time without prior notice. J RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric Operating Temp Range (T ) -40 to +85 C L materials and red phosphorus as a flame retardant, and <2% antimony in solder. Storage Temp +150 C ESD Rating - Human Body Model Class 1C (HBM) Moisture Sensitivity Level MSL 2 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Typical RF Performance at Key Operating Frequencies Parameter Unit 70MHz 100MHz 240MHz 400MHz 500MHz 850MHz Small Signal Gain dB 14.9 14.9 14.9 14.8 14.7 14.3 Output Third Order Intercept Point dBm 40.0 40.5 42.5 41.0 40.0 35.1 Output Power at 1dB Compression dBm 20.1 20.1 20.1 19.9 20.1 18.1 Input Return Loss dB 18 22 22 21 21 19 Output Return Loss dB 15 16 17 19 21 18 Reverse Isolation dB 1818 181818 18 Noise Figure dB 3.2 3.3 3.3 3.3 3.3 3.3 Test Conditions: V =8V, I =90mA Typ., OIP Tone Spacing=1MHz, P per tone=0dBm. T =25C, R =33 , Z =Z =50 , App circuit. S D 3 OUT L BIAS S L 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS111011