TGA2214 2 18 GHz 5 W Power Amplifier Product Overview Qorvos TGA2214 is a wideband power amplifier fabricated on Qorvos QGaN15 GaN on SiC process. The TGA2214 operates from 218GHz and achieves 5W of saturated output power with 14dB of large signal gain and greater than 20% power-added efficiency. This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost. The TGA2214 is matched to 50 with integrated DC Key Features blocking capacitors on both RF ports simplifying system integration it is ideally suited for electronic warfare, test Frequency Range: 218GHz instrumentation and radar applications across both military POUT: 37dBm PIN = 23dBm and commercial markets. PAE: 20% P = 23dBm IN Large Signal Gain (P = 23dBm): 14dB IN Lead free and RoHS compliant. Small Signal Gain: 22dB Return Loss: 7dB Bias: VD = +22V, IDQ = 450mA, VG = 2.3V Typical Chip Dimensions: 2.87 x 4.87 x 0.10mm Performance under CW operation Performance is typical across frequency. Please Functional Block Diagram reference electrical specification table and data plots for more details. Applications Test Equipment Electronic Warfare Military Radar Ordering Information Part No. Description TGA2214 218GHz 5W GaN Power Amplifier TGA2214EVB01 TGA2214 Evaluation Board Data Sheet Rev. G, August 2021 Subject to change without notice 1 of 13 www.qorvo.com TGA2214 2 18 GHz 5 W Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Value / Units Drain Voltage (VD) +29.5V Drain Voltage (VD) +22V Gate Voltage Range (VG) 5 to 0V Drain Current (IDQ) 450mA st Drain Current, 1 Stage (I ) 0.5A Operating Temperature (TBASE) 40 to 85C D1 nd Drain Current, 2 Stage (I ) 1.0A Electrical specifications are measured at specified test conditions. D2 Specifications are not guaranteed over all recommended operating See plot, conditions. Gate Current (IG) page 10 Power Dissipation (PDISS), 85C 30 W Input Power (PIN), CW, 50, 85C 31dBm Input Power (PIN), CW, VSWR 3:1, 85C 31dBm Mounting Temperature (30 s) 320C Storage Temperature 55 to +150C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2 18 GHz Frequency = 2 GHz 36 37.3 Output Power (P = 23dBm) Frequency = 10 GHz 35 38.1 dBm IN Frequency = 18 GHz 35 37.6 Frequency = 2 GHz 17.0 22.8 Power Added Eff. (P = 23dBm) Frequency = 10 GHz 13.5 21.4 % IN Frequency = 18 GHz 12.0 21.6 Frequency = 2 GHz 25.4 Small Signal Gain Frequency = 10 GHz 25 dB Frequency = 18 GHz 22 Frequency = 2 GHz 10.2 Input Return Loss Frequency = 10 GHz 11 dB Frequency = 18 GHz 13.5 Frequency = 2 GHz 9 Output Return Loss Frequency = 10 GHz 13.5 dB Frequency = 18 GHz 12.5 IM3 (P /Tone = 31dBm/Tone, 100MHz spacing) -20 dBc OUT IM5 (P /Tone = 31dBm/Tone, 100MHz spacing) -33 dBc OUT Small Signal Gain Temperature Coefficient -0.04 dB/C Output Power Temperature Coefficient -0.008 dBm/C Test conditions unless otherwise noted: 25C, VD = +22V, IDQ = 450mA, CW Data Sheet Rev. G, August 2021 Subject to change without notice 2 of 13 www.qorvo.com