TQP0104 30 W, 32 V, DC to 4 GHz, GaN RF Transistor Product Overview The TQP0104 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0104 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The TQP0104 can also be used as a driver in a macrocell base station power amplifier. The wide bandwidth of the TQP0104 makes it suitable for many different applications from DC to 4GHz. TQP0104 can deliver PSAT of 30 W at 28 to 32 V operation. Key Features The device is housed in an industry-standard 3 x 4 mm Frequency: DC to 4.0 GHz surface mount QFN package. 1 Output Power (P3dB) : 30.0 W 1 Lead-free and ROHS compliant Linear Gain : 17.0 dB 1 Typical PAE : 64.0% 3dB Operating Voltage: 32 V Low thermal resistance package Functional Block Diagram CW and Pulse capable 3 x 4 x 0.85 mm package Note 1: 2.6 GHz 20 19 18 17 V , RF In 1 16 V , RF Out G D Applications V , RF Out V , RF In 2 15 G D Macrocell Base Station Driver Microcell Base Station V , RF In 3 14 V , RF Out D G Small Cell Final Stage V , RF Out V , RF In 4 13 G D Active Antenna V , RF Out V , RF In 5 12 D G General Purpose Applications 6 11 V , RF Out Military and Civilian radar V , RF In D G Land mobile and military radio communications 8 7 9 10 Test instrumentation Wideband and narrowband amplifiers Jammers Pad Configuration Ordering Information Pad No. Symbol Part Number Description 1-6 RF IN, VG TQP0104 30W, DC-4GHz, 250 Piece 13 Reel 7-10, 17-20 N/C TQP0104-2.6-EVB 2.5-2.7 GHz Eval Board 11-16 RF OUT, VD TQP0104-2.1-DOH 2.1 GHz Doherty Eval Board Backside Paddle RF/DC GND Data Sheet Rev. F, March 17, 2020 Subject to change without notice 1 of 16 www.qorvo.com N/C N/C N/C N/C N/C N/C N/C N/C TQP0104 30 W, 32 V, DC to 4 GHz, GaN RF Transistor Recommended Operating Conditions Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Value Units Drain to Gate Voltage (VDG) 100 V Drain Voltage Range (VD) 32 (Typ.) V Gate Voltage Range (VG) 7 to +2 V Drain Quiescent Current (IDQ) 70 mA RF Input Power Over Drive above PIN Peak Drain Current (ID) 1800 (Typ.) mA 8 dB at 36 dBm POUT, 50 , T = 25C 1 Gate Voltage (V ) 2.8 (Typ.) V G VSWR Mismatch, P1dB Pulse (20% Electrical specifications are measured at specified test conditions. 10:1 duty cycle, 100 s width), T = 25C Specifications are not guaranteed over all recommended operating conditions. Storage Temperature 65 to 150C Exceeding any one or a combination of the Absolute Maximum Rating Note: conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may 1. To be adjusted to desired I DQ reduce device reliability. (1) RF Characterization Simulated Performance CW (1) Parameter Conditions Typical Value Units Frequency 2 2.5 3.0 3.5 GHz V 32 32 32 32 V D IDQ 65 65 65 65 mA GLIN Power Tuned 19.1 17.4 16.3 15.3 dB Output P Power Tuned 43.8 43.7 43.6 43.4 dBm 1dB PAE Power Tuned 70.6 63 62.3 62.5 % 1dB G1dB Power Tuned 18.1 16.4 15.3 14.3 dB Notes: 1. Test conditions unless otherwise noted: T =+25C A RF Characterization Test Performance at 2.6 GHz Symbol Parameter Min Typical Max Units P3dB Output Power at 1 dB Gain Compression 21.4 W DrE Drain Efficiency at 3 dB Gain Compression 65 % 3dB G3dB Gain at 3 dB Compression 14.3 dB Notes: 1. Test conditions unless otherwise noted: T = 25 C, V = 32 V, I = 60 mA, Signal: 100uS Pulse Width, 20% Duty Cycle A D DQ Electrical Characterization Symbol Parameter Min Typical Max Units Gate V = +10 V, V = 3.7 V 7.56 mA D G Leakage Data Sheet Rev. F, March 17, 2020 Subject to change without notice 2 of 16 www.qorvo.com