TQP0103 15 W, DC to 4 GHz, GaN Power Transistor Applications W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features Functional Block Diagram Operating Frequency Range: DC to 4 GHz Output Power (P ): 15 W SAT Drain Efficiency: 64% Linear Gain: 19 dB Package Dimensions: 3 x 4 x 0.85 mm General Description Pin Configuration The TQP0103 is a wide band over-molded QFN discrete Pin No. Label power amplifier. The device is a single stage unmatched 1-2, 5-11, 16-20 N/C power amplifier transistor. 3-4 RF IN, VG 12-15 RF OUT, V D The TQP0103 can be used in Doherty architecture for Backside Paddle RF/DC GND the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The TQP0103 can also be used as a driver in a macrocell base station power amplifier. The wide bandwidth of the TQP0103 makes it suitable for many difference applications from DC to 4 GHz. TQP0103 can deliver P of 15 W at 28 to 32 V SAT operation. Replace with ordering Ordering Information information for target product Lead-free and ROHS compliant. Part No. ECCN Description TQP0103 EAR99 15 W, DC to 4 GHz, GaN PA TQP0103-PCB EAR99 2.5-2.7 GHz Evaluation Board Preliminary Datasheet: Rev D 09-28-15 Disclaimer: Subject to change without notice - 1 of 10 - 2014 TriQuint www.triquint.com TQP0103 15 W, DC to 4 GHz, GaN Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Gate Voltage (V ) 6 V Operating Temperature 40 +105 C G Drain Voltage (V ) +40 V Gate Voltage (V ) 2.9 V D G Peak RF Input Power 32 dBm Drain Voltage (V ) 32 V D VSWR Mismatch, P1dB Pulse (20% Quiescent Current (ICQ) 70 mA 10:1 duty cycle, 100 s width), T = 25C 6 T for >10 hours MTTF 225 C CH Storage Temperature 65 to +150C Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not Operation of this device outside the parameter ranges guaranteed over all recommended operating conditions. given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: V = -3.03 V, V = 32 V, I = 70 mA, T = 25C. 2.6 GHz single-ended applications circuit G D CQ Parameter Conditions Min Typ Max Units Frequency Range DC 4000 MHz Quiescent Current 60 70 80 mA Linear Gain P = 30 dBm, Pulsed (10% duty cycle, 100 s width) 17 19 dB OUT P3dB Pulsed (10% duty cycle, 100 s width) 41.2 42 dBm Drain Efficiency P3dB 60 64 % Input Return Loss 14 dB Preliminary Datasheet: Rev D 09-28-15 Disclaimer: Subject to change without notice - 2 of 10 - 2014 TriQuint www.triquint.com