TQP9108 1.7 2.17 GHz 2-stage Power Amplifier General Description The TQP9108 is a high-efficiency two-stage power amplifier in a low-cost surface-mount package. The amplifier is able to achieve 39% power added efficiency at +27dBm output power while operating with a low 65 mA idle current. The amplifier is designed to ensure that all odd- order IMD products are below 17dBm at all output power levels below +24 dBm/tone. The TQP9108 integrates two high performance amplifier 3.5x4.5 mm Leadless SMT Package stages onto a module to allow for a compact system design and requires very few external components for operation. The amplifier is bias adjustable allowing the amplifiers power consumption to be optimized. The TQP9108 is available in a lead-free/RoHS-compliant 13-pin 3.5x4.5mm Product Features surface mount package and is pin-compatible to the higher 1.712.17 GHz Frequency Range frequency band version in the family with the TQP9107 (699-960 MHz). 30.5 dB gain +46dBm Output IP3 at Pout=+24dBm/tone 39% PAE at +27dBm Pout Internally Matched Integrated Inter-Stage Matching Bias Adjustable Functional Block Diagram Low idle current RFin V V N/C N/C N/C RFout PD1 PD2 13 12 11 10 9 8 7 Applications Wireless Infrastructure Matching Matching AMP1 AMP2 Repeaters, Boosters, DAS Network Network High Power Amplifiers Exposed Pin 1 Backside Pad Reference Mark GND Package Topside Small cell BTS 1 2 3 4 5 6 V V N/C N/C N/C N/C BIAS CC Top View Ordering Information Part No. Description TQP9108 1.71 2.17GHz Power Amplifier TQP9108-PCB Evaluation Board Datasheet July 22, 2021 Subject to change without notice - 1 of 11 - www.qorvo.com TQP9108 1.7 2.17 GHz 2-stage Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150C VCC +4.3 +5.0 V RF Input Power, CW, 50, T=25C +12 dBm V +4.0 V V BIAS CC Supply Voltage (V ) +6 V V , V +4.0 V V CC PD1 PD2 CC Exceeding any one or a combination of the Absolute Maximum Rating T 40 +105 C CASE conditions may cause permanent damage to the device. Extended 6 Tj for >10 hours MTTF +170 C application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 1710 2170 MHz Test Frequency 1915 MHz Gain 28.8 30.5 dB Noise Figure 5 dB Output P1dB +31.3 dBm Output IP3 Pout=+23dBm/tone, f=600kHz +41 +46 dBm IMD3, IMD5, IMD7 All power levels23dBm/tone 17 dBm Current, I Pout=+27dBm 300 mA CC Power Added Efficiency Pout=+27dBm 39 % Idle Current No RF Input Power 67 mA Pout = P1dB, Signal: CW, All Phases 10:1 VSWR Survivability Pout = +28dBm, All Phases 6:1 Signal: 20 MHz LTE 1C, PAR = 9.5dB Junction to case 37.5 C/W Thermal Resistance, jc Notes: 1. Test conditions unless otherwise noted: V =+4.3 V, V = V = +4.0 V, Temp=+25C, 50 system. CC PD1 PD2 Datasheet July 22, 2021 Subject to change without notice - 2 of 11 - www.qorvo.com