TGA2239 13.015.5GHz 50W GaN Power Amplifier Product Description Qorvos TGA2239 is a Ku-band, high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The TGA2239 operates from 13.015.5GHz and provides a superior combination of power, gain and efficiency by achieving greater than 50W (47 dBm) of saturated output power with 26.5dB of large signal gain and greater than 36% power-added efficiency. This superior performance provides system designers the flexibility to improve system performance while reducing size and cost. Product Features Frequency Range: 13.015.5GHz The TGA2239 is fully matched to 50 with integrated DC blocking capacitors on RF ports simplifying system PSAT : 47.5dBm (PIN = 21dBm) integration. It is ideally suited for military and commercial PAE: 36.2% (PIN = 21dBm) Ku-band radar and satellite communication systems. Large Signal Gain: 26.5dB Lead-free and RoHS compliant. Small Signal Gain: 34.4 dB Bias: V = 28 V, I = 900mA D DQ Chip Dimensions: 5.00 x 6.65 x 0.10 mm Performance under CW conditions Functional Block Diagram Applications 2 5 3 4 Satellite Communications Data Link Radar 1 6 10 9 8 7 Ordering Information Part No. Description TGA2239 13.015.5GHz 35W GaN Power Amplifier TGA2239EVB1 Evaluation Board Data Sheet Rev. D, September 2021 Subject to change without notice - 1 of 15 - www.qorvo.com TGA2239 13.015.5GHz 50W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (V ) 29.5V Drain Voltage (V ) 28V D D Gate Voltage Range (VG) 5 to 0V Drain Current (IDQ) 900mA Drain Current (I ) 2.8A Operating Temperature 40 to 85C D1-2 Drain Current (I ) 4.3 A Electrical specifications are measured at specified test D3 conditions. Specifications are not guaranteed over all Gate Current See plot page 10 recommended operating conditions. Power Dissipation, 85C, CW 149W Input Power (PIN), CW, 50, 33 dBm V = 28V, I = 900mA, 85C D DQ Input Power (PIN), CW, VSWR 3:1, 33 dBm VD = 28V, IDQ = 900mA, 85C Mounting Temperature (30 seconds) 320C Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 13 15.5 GHz Output Power (PIN = 21dBm) 13.0 GHz 46.0 47.8 dBm 13.5 GHz 46.0 48.0 dBm 13.75 GHz 46.0 47.8 dBm 14.5 GHz 46.0 47.4 dBm 15.5 GHz 45.5 46.8 dBm Power Added Efficiency (PIN = 21dBm) 13.0 GHz 30.0 40.2 % 13.5 GHz 30.0 39.6 % 13.75 GHz 25.0 42.3 % 14.5 GHz 25.0 34.2 % 15.5 GHz 25.0 31.5 % Power Gain (PIN = 21dBm) 26.5 dB Small Signal Gain 34.4 dB Input Return Loss 19 dB Output Return Loss 11 dB 0.100 dB/C Sm. Sig. Gain Temperature Coefficient (85 to 40 C) Output Power Temperature Coefficient (85 to 25 C) 0.014 dB/C Test conditions unless otherwise noted: 25C , V = +28V, I = 900mA, CW D DQ Data Sheet Rev. D, September 2021 Subject to change without notice - 2 of 15 - www.qorvo.com