TGA2527-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 12.5 15.5 GHz 21 20 24 23 22 19 TOI: 41 dBm Power: 31.5 dBm Psat, 30 dBm P1dB 1 18 Gain: 25 dB 17 2 Return Loss: 10 dB NF: 7.5 dB 16 3 Integrated Power Detector 15 4 Bias: Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical 14 5 Package Dimensions: 5.0 x 5.0 x 0.85 mm 6 13 7 8 9 10 11 12 General Description Pin Configuration The TriQuint TGA2527-SM is a Ku-Band Packaged Pin Symbol Power Amplifier. The TGA2527-SM operates from 12.5 1, 2, 3, 5, 6, 9, 12, 13, 14, N/C to 15.5 GHz and is designed using TriQuints power 15, 17 pHEMT production process. 4 RF IN 7, 8, 23, 24 Vg The TGA2527-SM typically provides 41dBm of TOI at 16 RF OUT 20dBm Pout/Tone, 30 dBm of output power at 1dB gain 10, 11, 20, 21 Vd compression, and the small signal gain is 25 dB. 18 Vref 19 Vdet The TGA2527-SM is available in a low-cost, surface 22 GND mount 24 lead 5x5 QFN package and is ideally suited for Point-to-Point Radio, and Ku-Band VSAT Ground Terminal. Lead-free and RoHS compliant. Evaluation Boards are available upon request. Ordering Information Part No. ECCN Description TGA2527-SM EAR99 Ku-band Power Amplifier Standard T/R size = 500 pieces on a 7 reel. - 1 of 13 - Preliminary Data Sheet: Rev C 11/11/15 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TGA2527-SM Ku-Band Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Min Max Unit Parameter Typical Drain Voltage,Vd +8 V s Gate Voltage,Vg -3 to 0 V Vd 6 V Drain Current, Id 1.12 A Id 650 mA Gate Current, Ig -5.5 to 88 mA Id drive (Under RF 850 mA Power Dissipation, Pdiss 9 W Drive) RF Input Power, CW, 50,T = 25C 24 dBm Vg -0.55 V o Channel Temperature, Tch 200 C o Electrical specifications are measured at specified test conditions. Mounting Temperature (30 Seconds) 260 C o Specifications are not guaranteed over all recommended operating Storage Temperature -40 to 150 C conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical. Parameter Min Typical Max Units Operational Frequency Range 12.5 15.5 GHz Gain 25 dB Input Return Loss -10 dB Output Return Loss -10 dB Output Power Saturation 31.5 dBm Output Power 1 dB Gain Compression 30 dBm Output TOI Pout/Tone = 20 dBm 41 dBm 7.5 dB Noise Figure Gain Temperature Coefficient -0.033 dB/C -0.005 dBm/C Power Temperature Coefficient - 2 of 13 - Preliminary Data Sheet: Rev C 11/11/15 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network