TGA2590-CP 6 12 GHz 30 W GaN Power Amplifier Product Description Qorvo s TGA2590-CP is a wideband MMIC power amplifier fabricated on Qorvo s QGaN25 0.25um GaN on SiC process. The TGA2590-CP operates from 6-12GHz and provides 30W of saturated output power with >22dB of large signal gain and >30% power-added efficiency. The TGA2590-CP is offered in a 10-lead 15 x 15 mm bolt- down package. The package has a pure Cu base, offering superior thermal management. The TGA2590-CP is fully matched to 50 with DC Product Features blocking caps at both RF ports allowing for simple system integration. The broadband performance supports both Frequency Range: 612 GHz electronic warfare and radar opportunities across defense and commercial markets. P : 45 dBm P = 23 dBm OUT IN PAE: >30% PIN = 23 dBm Lead-free and RoHS compliant. Small Signal Gain: 35 dB Bias: V = +20V (CW), I = 2 A, V = 2.4V typical D DQ G Package Dimensions: 15.2 x 15.2 x 3.5mm Package base is pure Cu offering superior thermal management Performance is typical across frequency. Please reference electrical specification table and data plots for more details Functional Block Diagram Applications Electronic Warfare Commercial and Military Radar Ordering Information Part No. Description TGA2590-CP 6 12 GHz 30 W GaN Power Amplifier 1098063 TGA2590-CP Evaluation Board - 1 of 11 - Data Sheet Rev. C, March 19, 2019 www.qorvo.com TGA2590-CP 6 12 GHz 30 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Range Parameter Min Typ. Max Units Drain Voltage (VD) 40V Drain Voltage (V ) +20 +25 V D Gate Voltage Range (V ) 8 to 0V G Drain Current, (I ) 2 A DQ Drain Current (I ) 8A D Gate Voltage Range (V ) -2 to -3 V G Gate Current (I ) See plot page 6 G Input Power (P ) +17 +25 dBm IN Power Dissipation (P ), 85C 135W DISS T Range 40 +85 C BASE Input Power (P ), 50, 85C, CW 30dBm IN Electrical specifications are measured at specified test Input Power (P ), 85C, VSWR 6:1, IN conditions. Specifications are not guaranteed over all 27 dBm recommended operating conditions. VD = 20V, CW Lead Soldering Temperature 260C (30 Seconds) Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 6 12 GHz Small Signal Gain - 35 - dB Input Return Loss - 5 - dB Output Return Loss - 5 - dB Output Power ( PIN = 23dBm) - 46 - dBm Power Added Efficiency ( P = 23dBm) - >30 - % IN Drain Voltage (V ) 20 - 25 V D Load VSWR - - 2.0:1 Input Power (P ) 17 - 25 dBm IN Small Signal Gain Temperature Coefficient 0.07 dB/C Output Power Temperature Coefficient -0.015 dBm/C Test conditions unless otherwise noted: 25C, V = +20V, I = 2 A, V = 2.4V typical, CW. D DQ G - 2 of 11 - Data Sheet Rev. C, March 19, 2019 www.qorvo.com