QPA5263A DC4500MHz Cascadable SiGe HBT Amplifier Product Overview The QPA5263A is a high performance SiGe HBT MMIC amplifier. A Darlington configuration provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of 6 Lead SOT-363 Package intermodulation products. The QPA5263A may be operated from a variety of supply Key Features voltages by using a voltage dropping resistor. Two DC- DC to 4500 MHz Operation blocking capacitors, bypass capacitors and an optional RF choke complete the circuit required for operation of this Single Positive Voltage Supply internally matched 50 ohm device. Gain: 12.5dB at 1950MHz Output IP3: +30.5dBm typical at 1950MHz The QPA5263A is assembled in an industry standard SOT- Noise Figure: 4.4dB Typical at 1950MHz 363 package that is lead-free and RoHS-compliant. Lead-free/RoHS-compliant SOT-363 Package Functional Block Diagram Applications Cellular, PCS, GSM, UMTS PA Driver Amplifier IF/RF Buffer Amplifier Wireless Data, Satellite Top View Ordering Information Part No. Description QPA5263ASQ 25 Piece Sample Bag QPA5263ASR 100 Pieces on 7 Reel QPA5263ATR7 3000 pieces on a 7 reel QPA5263APCK401 850MHz, EVB with 5 Piece Sample Bag Data Sheet January 17, 2017 Subject to change without notice 1 of 7 www.qorvo.com QPA5263A DC 4500MHz Cascadable SiGe HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temp 55 to +150C Operating Temperature 40 +105 C Device Voltage (VD) +6 V Junction Temperature (TJ) +125 C Device Current (I ) 120 mA Electrical specifications are measured at specified test conditions. D Specifications are not guaranteed over all recommended operating RF Input Power (Z = 50) +16dBm L conditions. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Bias Conditions should also satisfy the following expression: I x V < (T -T ) / R D D JUNCTION LEAD TH Electrical Specifications (1) Parameter Conditions Min Typ Max Units 850MHz 12.8 Small Signal Gain 1950MHz 12.5 dB 2400MHz 12.4 850MHz +16.3 Output Power at 1dB Compression 1950MHz +15.2 dBm 2400MHz +15.1 850MHz +33.9 (2) Output Third Intercept Point 1950MHz +30.5 dBm 2400MHz +29.1 850MHz 13.9 Input Return Loss, S11 1950MHz 13.8 dB 2400MHz 15.6 850MHz 15.8 Output Return Loss, S22 1950MHz 14.5 dB 2400MHz 14.5 850MHz 17.8 Reverse Isolation, S12 1950MHz 18.2 dB 2400MHz 18.5 850MHz 4.3 Noise Figure 1950MHz 4.4 dB 2400MHz 4.5 Device Operating Voltage +3.05 +3.4 +3.95 V Device Operating Current 60 mA Thermal Resistance 97 C/W Notes: 1. Test conditions unless otherwise noted: V = +8 V, R = 75, I =60 mA Typ., OIP3 Tone Spacing = 1MHz, P per tone = 5dBm, T = S BIAS D OUT LEAD +25C, Z = Z =50 S L 2. Pout per tone = -10 dBm Data Sheet January 17, 2017 Subject to change without notice 2 of 7 www.qorvo.com