TGA2818-SM
S-Band 30 W GaN Power Amplifier
Applications
Military Radar
Civilian Radar
Wideband Amplifiers
Product Features Functional Block Diagram
28 27 26 25 24 23 22
Frequency Range: 2.8 - 3.7 GHz
Pout: > 45.5 dBm (Pin=27 dBm)
1 21
Large Signal Gain: > 18.0 dB (Pin=27 dBm)
2 20
PAE: > 47 % (Pin=27 dBm)
Bias: VD=28 V, IDQ=200 mA, VG=-2.65 V (Typ) 3 19
Package Dimensions: 6.0 x 6.0 x 0.85 mm
RF In 4 18 RF Out
5 17
6 16
7 29 15
8 9 10 11 12 13 14
General Description Pad Configuration
TriQuints TGA2818-SM is a high-power, S-band
Pad Number Symbol
amplifier fabricated on TriQuints TQGaN25 0.25um
4 RF Input
GaN on SiC production process. Covering 2.8-3.7
18 RF Output
GHz, the TGA2818-SM provides greater than 45.5
22, 23 V
dBm of saturated output power and greater than D2
18.0 dB of large-signal gain while achieving greater
26 VD1
than 47 % power added efficiency.
27 VG2
28 V
G1
The TGA2818-SM can also support a variety of
operating conditions to best support system
requirements. With good thermal properties, it can
support a range of bias voltages and will perform
Ordering Information
well under pulse applications. The TGA2818-SM is
matched to 50 ohms. It is ideal for use in both
Part ECCN Description
commercial and military radar systems.
S-Band 30 W GaN
TGA2818-SM EAR99
Power Amplifier
Lead-free and RoHS compliant.
TGA2818- TGA2818-SM
EAR99
Evaluation boards available on request. SM_EVB Evaluation Board
Datasheet: Rev B 12-08-15 Disclaimer: Subject to change without notice
- 1 of 14 -
2014 TriQuint www.triquint.com
TGA2818-SM
S-Band 30 W GaN Power Amplifier
Absolute Maximum Ratings Recommended Operating Conditions
Parameter Value Parameter Value
Drain Voltage (VD) 40 V Drain Voltage 28 V
Drain Current (I /I ) 0.6 / 2.7A Drain Current (quiescent, I ) 200 mA
D1 D2 DQ
Gate Current (IG_MAX) See graph Drain Current (under drive, ID) 3.0 A
Dissipated Power (P ) 60 W Gate Voltage -2.65 V
DISS
Electrical specifications are measured at specified test
Input Power: 50 , 85 C 33 dBm
conditions. Specifications are not guaranteed over all
33 dBm
Input Power: 3:1 VSWR, 85 C
recommended operating conditions.
Channel Temperature, TCH 275 C
Storage Temperature -55 to 150 C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical Specifications
Test conditions, unless otherwise noted: 25 C, V = 28 V, I = 200 mA, Pulse Width = 100 us, Duty Cycle = 10%
D DQ
Parameter Min Typical Max Units
Frequency 2.8 3.7 GHz
Output Power (@ 27 dBm PIN) > 45.5 dBm
Large Signal Gain (@ 27 dBm P ) > 18.0 dB
IN
Power Added Efficiency (@ 27 dBm PIN) > 47.0 %
Input Return Loss > 15.0 dB
Output Return Loss > 9.0 dB
Output Power Temperature Coefficient -0.004 dBm/C
Datasheet: Rev B 12-08-15 Disclaimer: Subject to change without notice
- 2 of 14 -
2014 TriQuint www.triquint.com