TGA3042 7 10.5GHz 4.5W GaN Power Amplifier Product Description Qorvos TGA3042 is a wideband high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The TGA3042 operates from 7 10.5 GHz and typically provides 4.5 W saturated output power with power-added efficiency of 38.5% and large- signal gain of 23.5 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The TGA3042 is matched to 50 with integrated DC blocking capacitors on both RF I/O ports simplifying system Product Features integration. The wideband performance makes it ideally suited in support of multiple radar and communication Frequency Range: 710.5GHz bands. POUT: 36.5dBm at PIN = 13dBm The TGA3042 is 100% DC and RF tested on-wafer to PAE: 38.5% at P = 13dBm IN ensure compliance to electrical specifications. Large Signal Gain: 23.5 dB at PIN = 13 dBm Small Signal Gain: 32 dB Lead-free and RoHS compliant. Bias: V = 20V, I = 200 mA, V = 2.2V Typical D DQ G Chip Dimensions: 2.75 x 1.4 x 0.10mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications VG12 VG3 VD VREF VDET Radar Communications RF IN RF OUT VG12 VG3 VD VREF VDET Ordering Information Part No. Description TGA3042 710.5GHz 4.5W GaN Power Amplifier Data Sheet Rev. C, January 2021 - 1 of 18 - www.qorvo.com TGA3042 7 10.5GHz 4.5W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 20 V Gate Voltage Range (V ) 8 to 0V Drain Current (I ) 200 mA G DQ Drain Current (I ) 720 mA Gate Voltage (V ), Typical 2.2 V D G Electrical specifications are measured at specified test Gate Current (I ) See chart, pg. 13 G conditions. Specifications are not guaranteed over all Power Dissipation (P ), 85C 15.4 W DISS recommended operating conditions. Input Power (PIN), CW, 50, 23 dBm VD=20 V, IDQ=200 mA, 85 C Input Power (PIN), CW, VSWR 3:1, 23 dBm VD=20 V, IDQ=200 mA 85 C Mounting Temperature (30 seconds) 320 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 7 10.5 GHz Output Power (Pin = 13 dBm) 7.0 GHz 36.2 dBm 9.0 GHz 36.5 dBm 10.5 GHz 36.1 dBm Power Added Efficiency (Pin = 13 dBm) 7.0 GHz 42.5 % 9.0 GHz 37.9 % 10.5 GHz 36.3 % rd 3 Order Intermodulation Level 7.0 GHz 23.3 dBc (P /Tone= 26 dBm) 9.0 GHz 24.0 dBc OUT 10.5 GHz 23.8 dBc Small Signal Gain 7.0 GHz 33.1 dB 9.0 GHz 32.5 dB 10.5 GHz 31.0 dB Input Return Loss 7.0 GHz 16 dB 9.0 GHz 26 dB 10.5 GHz 16 dB Output Return Loss 7.0 GHz 12 dB 9.0 GHz 10 dB 10.5 GHz 13 dB Output Power Temperature Coefficient (2585 C) 0.011 dB/C Sm. Signal Gain Temperature Coefficient 0.055 dB/C Test conditions, unless otherwise noted: 25 C, VD = 20 V, IDQ = 200 mA, VG = 2.2 V Typical Data Sheet Rev. C, January 2021 - 2 of 18 - www.qorvo.com