RF2373 3.3V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER Package Style: SOT 5-Lead Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.7V to 5.0V Power RF IN 1 5 GND2 Supply 0.4GHz to 4GHz Operation GND1 2 SOT 5-Lead Package Applications BIAS 3 4RF OUT WiFi LNA/Driver GPS LNA CDMA PCS LNA Low Noise Transmit Power Amplifier Functional Block Diagram General Purpose Amplifica- tion Product Description Driver Amplifier for TX Power The RF2373 is a low noise amplifier with a high dynamic range designed for WiFi, Amplifier WiMAX, and digital cellular applications. The device functions as an outstanding front end low noise amplifier or driver amplifier in the transmit chain of digital sub- scriber units where low transmit noise power is a concern. When used as an LNA, the bias current can be set externally. When used as a PA driver, the IC can operate directly from a single cell Li-ion battery and includes a power down feature that can be used to completely turn off the device. The IC is featured in a standard SOT 5- lead plastic package. Ordering Information RF23733.3V Low Noise Amplifier/ 3V Driver Amplifier RF2373 Standard 25 piece bag RF2373SR Standard 100 piece reel RF2373TR7 Standard 2500 piece reel RF2373PCK-414 Fully Assembled Evaluation Board and 5 loose sample pieces Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110615 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 8RF2373 Caution ESD sensitive device. Absolute Maximum Ratings Exceeding any one or a combination of the Absolute Maximum Rating conditions may Parameter Rating Unit cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Supply Voltage -0.5 to +6.0 V mance or functional operation of the device under Absolute Maximum Rating condi- DC tions is not implied. Bias Voltage, V <V V BIAS CC DC RoHS status based on EUDirective2002/95/EC (at time of this document revision). Input RF Level at F<2.3GHz +5 (see note) dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Input RF Level at F>2.3GHz +10 (see note) dBm infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Current Drain, I 32 mA CC cation circuitry and specifications at any time without prior notice. Operating Ambient Temperature -40 to +85 C Storage Temperature -40 to +150 C NOTE: Exceeding any one or a combination of the above maximum rating lim- its may cause permanent damage. Input RF transients to +15dBm will not harm the device. For sustained operation at inputs >+5dBm, a small dropping resistor is recommended in series with the V in order to limit the current due CC to self-biasing to <32mA. Furthermore, while the LNA is in Bypass Mode, and for sustained operation at the input, +10dBm is the maximum recommended power level for Frequencies above 2300MHz. +5dBm is the maximum recom- mended power level for Frequencies <2300MHz. Specification Parameter Unit Condition Min. Typ. Max. 25C, V =3.3V, at typical frequencies unless CC Overall otherwise specified Supply Voltage (V 2.7 3.3 5.0 V CC) Bias Voltage (V 2.7 3.3 5.0 V BIAS) RF Frequency Range 400 3800 MHz Power Down Current 10 AV =0V BIAS Isolation 23 dB Current Drain (LNA) 8 14 19 mA Bias Resistor (R1)=560 IP2 55 dBm Cellular Low Noise Amplifier Frequency 820 880 960 MHz Gain 21.5 dB Noise Figure 1.1 dB IIP3 -1 dBm IP1dB -11 dBm GPS Low Noise Amplifier Frequency 1575 MHz Gain 19.0 dB Noise Figure 1.1 dB IIP3 5 dBm IP1dB -6 dBm 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110615