TGA2963-CP 6 18GHz 20W GaN Power Amplifier Product Description Qorvos TGA2963-CP is a broadband high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The TGA2963-CP operates from 6 18 GHz and typically provides 20 W saturated output power with power-added efficiency of 20% and large-signal gain of 18 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The TGA2963-CP is offered in a 10-lead 15 x 15mm bolt- Product Features down package. Assembled with a pure-copper base, coupled with its high efficiency, the TGA2963-CP minimizes Frequency Range: 618GHz the strain on the system-level cooling requirements, further POUT: 43dBm PIN = 25dBm reducing system operating costs. The broadband PAE: 20% P = 25dBm IN performance makes it ideally suited to support test Large Signal Gain: 18 dB PIN = 25dBm instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands. Small Signal Gain: 26 dB Bias: VD = +20V, IDQ = 2500mA, VG = 2.3V Typical Both RF ports have integrated DC blocking capacitors and Process Technology: QGaN15 are fully matched to 50 Ohms. Package Dimensions: 15.2 x 15.2 x 3.5mm RoHS compliant. Package base is pure Cu offering superior thermal management Performance is typical across frequency. Please reference electrical specification table and data plots for Functional Block Diagram more details. Applications Test Instrumentation 1 10 Electronic Warfare (EW) 2 9 Radar 3 8 Communications 4 7 5 6 Ordering Information Part No. Description TGA2963-CP 618GHz 20W GaN Power Amplifier Data Sheet Rev. C, May 2020 - 1 of 17 - www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential (all pages) TGA2963-CP 6 18GHz 20W GaN Power Amplifier Recommended Operating Conditions Absolute Maximum Ratings ConditioConditions Parameter Value/Range Parameter Value/Range Drain Voltage (V ) +29.5V Drain Voltage (V ) +20V D D Gate Voltage Range (VG) -8 to 0V Drain Current (IDQ) 2500mA Drain Current 8160 mA Gate Voltage (V ) 2.9 to 2.0 V (Typ.) G Forward Gate Current (I ) See I plot Temperature (T ) 40 to 85C G G MAX BASE Electrical specifications are measured at specified test Power Dissipation (PDISS), 85C, CW 150W conditions. Specifications are not guaranteed over all Input Power (P ): CW, 50, IN recommended operating conditions. 30dBm V = +20V, I = 2500mA, 85C D DQ Input Power (PIN): CW, VSWR 3:1, 30dBm V = +20V, I = 2500mA, 85C D DQ Mounting Temperature 260C (30 Seconds) Storage Temperature -55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, VD = +20V, IDQ = 2500mA, CW Parameter Min Typ Max Units Operational Frequency Range 6 18 GHz Frequency = 6 GHz 42.8 Output Power P = 25dBm Freq uency = 12 GHz 45 dBm IN Frequency = 18 GHz 43 Frequency = 6 GHz 21 Power Added Efficiency Frequency = 12 GHz 24 % P = 25dBm IN Frequency = 18 GHz 18 Frequency = 6 GHz 28 Small Signal Gain Frequency = 12 GHz 34 dB Frequency = 18 GHz 24 Frequency = 6 GHz 16 Input Return Loss Frequency = 12 GHz 12 dB Frequency = 18 GHz 9 Frequency = 6 GHz 10 Output Return Loss Frequency = 12 GHz 7.7 dB Frequency = 18 GHz 6.7 Small Signal Gain Temperature Coefficient 0.08 dB/C Output Power Temperature Coefficient 0.015 dBm/C Gate Leakage (V = 10 V, V = 3.7 V) 21.6 mA D G Data Sheet Rev. C, May 2020 - 2 of 17 - www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential (all pages)