R1005250L R1005250L 25dB Reverse Hybrid 5MHz to 100MHz (Low Current) Package: SOT-115J The R1005250L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and Features superior return loss performance. The part also provides Excellent Linearity optimal reliability with low noise and is well suited for 5MHz to Superior Return Loss Performance 100MHz CATV amplifiers for reverse channel systems. Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under All Terminations 25.5dB Typical Gain at 100MHz 140mA Max. at 24VDC Applications 5MHz to 100MHz CATV Amplifier For Reverse Channel Systems Ordering Information R1005250L Box with 50 pieces Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit RF Input Voltage (single tone) 65 dBmV DC Supply Over-Voltage (5 minutes) 30 V RoHS (Restriction of Hazardous Storage Temperature -40 to +100 C Substances): Compliant per EU Directive 2011/65/EU. Operating Mounting Base Temperature -30 to +100 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implie RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140129 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 3 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. R1005250L Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max General Performance V+ = 24V T = 30C Z = Z = 75 MB S L 24.8 25.3 25.8 dB f = 5MHz Power Gain 24.6 25.5 dB f = 100MHz 1 Slope -0.2 0.2 0.5 dB f = 5MHz to 100MHz Flatness of Frequency Response 0.3 dB f = 5MHz to 100MHz (peak to valley) Input Return Loss -20 dB f = 5MHz to 100MHz Output Return Loss -20 dB Noise Figure 3.4 3.6 dB f = 100MHz Total Current Consumption (DC) 125.0 133 140.0 mA Distortion Data 5MHz to 100MHz V+ = 24V T = 30C Z = Z = 75 MB S L 2 -69 dBc 7 ch flat V = 50dBmV 0 CTB 3 -65 dBc 12 ch flat V = 50dBmV 0 2 -59 dBc 7 ch flat V = 50dBmV 0 XMOD 3 -55 dBc 12 ch flat V = 50dBmV 0 2 -70 dBc 7 ch flat V = 50dBmV 0 CSO 3 -70 dBc 12 ch flat V = 50dBmV 0 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 7 channels, NTSC frequency raster: T7 - T13 (7.0MHz to 43MHz), +50dBmV flat output level. 3. 12 channels, NTSC frequency raster: T7 - T13 (7.0MHz to 43MHz), 2 - 6 (55.25MHz to 83.25MHz), +50dBmV flat output level. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140129 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3