TGA2625 1011GHz 20W GaN Power Amplifier Product Description Qorvos TGA2625 is an x-band, high power MMIC amplifier fabricated on Qorvos production 0.25 um GaN on SiC process. The TGA2625 operates from 1011 GHz and provides a superior combination of power, gain and efficiency. Achieving 20 W of saturated output power with 28 dB of large signal gain and greater than 42 % power-added efficiency, the TGA2625 provides the level of performance demanded by todays system architectures. Depending on the system requirements, the TGA2625 can Product Features support cost saving initiatives on existing systems while supporting next generation systems with increased Frequency Range: 10 11 GHz performance. PSAT: 43 dBm PIN = 15 dBm P1dB: > 40 dBm Lead-free and RoHS compliant. PAE: > 42 % PIN = 15 dBm Evaluation boards are available upon request. Large Signal Gain: 28 dB Small Signal Gain: 37 dB Return Loss: >11 dB Bias: VD = 28 V, IDQ = 365 mA, VG = -2.5 V Typical Pulsed V PW = 100 us and DC = 10 % D: Die Dimensions: 5.00 x 2.62 x 0.10 mm Functional Block Diagram Applications Radar Communications Ordering Information Part No. ECCN Description 10 11 GHz 20 W GaN TGA2625 3A001.b.2.c Power Amplifier Data Sheet Rev. B, October 04, 2016 Subject to change without notice - 1 of 14 - www.qorvo.com TGA2625 1011GHz 20W GaN Power Amplifier Recommended Operating Absolute Maximum Ratings Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V Gate Voltage Range (VG) 8 to 0V Drain Current (IDQ) 365 mA (Total) Drain Current (ID1-2) 1.65 A Gate Voltage (VG) -2.5 V (Typ.) Drain Current (ID3) 2.15 A Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Gate Current (IG1-2) 2 to 10 mA recommended operating conditions. Gate Current (IG3) 6 to 14 mA Power Dissipation (PDISS), 85C 49 W Input Power (PIN), CW, 50, 25 dBm VD = 28V, 85C Input Power (P ), CW, VSWR 6:1, IN 19 dBm VD = 28V, 85C Channel Temperature (TCH) 275 C Mounting Temperature (30 seconds) 320 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 10 11 GHz Small Signal Gain 37 dB Input Return Loss 12 dB Output Return Loss 11 dB Output Power (Pin = 15dBm) 43 dBm Power Added Efficiency (Pin = 15dBm) 42 % Power 1dB Compression (P1dB) 40 dBm Small Signal Gain Temperature Coefficient 0.05 dB/C Recommended Operating Voltage: 20 28 32 V 0 Test conditions unless otherwise noted: 25 C, VD = 28V, IDQ = 365mA, VG = -2.5V Typical, Pulsed VD: PW = 100us, DC = 10% Data Sheet Rev. B, October 04, 2016 Subject to change without notice - 2 of 14 - www.qorvo.com