X-On Electronics has gained recognition as a prominent supplier of TGA2578-CP RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TGA2578-CP RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

TGA2578-CP Qorvo

TGA2578-CP electronic component of Qorvo
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Part No.TGA2578-CP
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 2-6GHz PAE >30% CW Gain >26dB
Datasheet: TGA2578-CP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1031.6041 ea
Line Total: USD 1031.6 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1031.6041
30 : USD 991.9206

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We are delighted to provide the TGA2578-CP from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGA2578-CP and other electronic components in the RF Amplifier category and beyond.

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TGA2578-CP 2 6 GHz 30 W GaN Power Amplifier Product Description Qorvos TGA2578-CP is a packaged wideband power amplifier fabricated on Qorvos QGaN25 0.25um GaN on SiC process. Operating from 2 to 6 GHz, the TGA2578-CP achieves 30 W saturated output power with a power-added efficiency of > 30 %, and > 26 dB small signal gain. The TGA2578-CP is offered in a 10-lead 15.2 x 15.2 mm bolt-down package. The package has a pure Cu base, offering superior thermal management. The TGA2578-CP is ideally suited to support both commercial and defense applications. Product Features Both RF ports have integrated DC blocking capacitors and Frequency Range: 26 GHz are fully matched to 50 Ohms. P : 45 dBm P = 23 dBm OUT IN Lead-free and RoHS compliant. PAE: >30% PIN = 23 dBm Small Signal Gain: > 26 dB IM3: -30 dBc 30 dBm Pout/Tone Bias: VD = +28V, IDQ = 400mA, VG = 2.8V typical Package Dimensions: 15.2 x 15.2 x 3.5mm Package base is pure Cu offering superior thermal management Performance is typical across frequency. Please reference electrical specification table and data plots for Functional Block Diagram more details Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Ordering Information Part No. Description TGA2578-CP 2 6 GHz 30 W GaN Power Amplifier 1096052 TGA2578-CP Evaluation Board - 1 of 13 - Data Sheet Rev. D, March 18, 2019 www.qorvo.com TGA2578-CP 2 6 GHz 30 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Range Parameter Min Typ. Max Units Drain Voltage (VD) 40V Drain Voltage (V ) +28 V D Gate Voltage Range (V ) 8 to 0V G Drain Current, (I ) 400 mA DQ Drain Current (I ) 5A D Gate Voltage (V ) -2.8 Typical V G Gate Current (I ) See plot page 8 G T Range 40 +85 C BASE Power Dissipation (P ), 85C 85W DISS Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Input Power (P ), 50, 85C, CW 27dBm IN recommended operating conditions. Input Power (P ), 85C, VSWR 3:1, IN 27 dBm VD = 28V, CW Input Power (P ), 85C, VSWR 10:1, IN 25dBm VD = 28V, CW Lead Soldering Temperature 260C (30 Seconds) Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2 6 GHz Small Signal Gain >26 dB Input Return Loss >12 dB Output Return Loss >5 dB Output Power ( PIN = 23dBm) 45 dBm Power Added Efficiency ( P = 23dBm) >30 % IN IM3 (Pout/tone = 30 dBm/Tone) -30 dBc IM5 (Pout/tone = 30 dBm/Tone) -40 dBc Small Signal Gain Temperature Coefficient 0.05 dB/C Output Power Temperature Coefficient -0.02 dBm/C Test conditions unless otherwise noted: 25C, V = +28V, I = 400mA, V = 2.8V typical, CW. D DQ G - 2 of 13 - Data Sheet Rev. D, March 18, 2019 www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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