TGA2731-SM 2.7 4.0 GHz Driver Amplifier General Description Qorvo s TGA2731-SM is a driver amplifier fabricated on Qorvo s QPHT25 0.25 um GaAs production process. The TGA2731-SM operates from 2.7 to 4.0 GHz and provides > 30.7 dBm of output power with > 22.7 dB of large signal gain. The TGA2731-SM also includes a 13 dB attenuator at the input, and a simple resistively coupled power detector at the output. The amplifier can be operated from a single supply in the self-biased mode. The TGA2731-SM is offered in a 5x5 mm plastic QFN. It is Product Features well-matched to 50 ohms, and includes integrated DC blocking caps on both RF ports allowing for simple system Frequency Range: 2.7-4.0 GHz integration. Small Signal Gain: > 24 dB Power: > 30.7 dBm Lead-Free & RoHS compliant. PAE: > 22 % IM3: < -32 dBc ( 3.5 GHz) Evaluation Boards are available on request. Input Return Loss > 7 dB Output Return Loss > 11 dB Self-Bias: V = 6 V, V = 0 V, I = 900 mA D G DQ Single Supply Operation Package Dimensions: 5.0 x 5.0 x 0.85 mm Applications Functional Block Diagram Commercial and Military Radar Communications 1 21 Test Instrumentation 2 20 3 19 ATT/ RF IN 4 18 RF OUT SW 5 17 6 DET 16 7 15 Ordering Information Part Description TGA2731-SM 2.74.0 GHz Driver Amplifier TGA2731-SM EVB Evaluation Board Data Sheet Rev A, Julyl 2019 Subject to change without notice 1 of 15 www.qorvo.com 8 28 9 27 10 26 11 25 12 24 13 23 14 22 TGA2731-SM 2.74.0 GHz Driver Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 9 Drain Voltage (V ) 6 V D Gate Voltage Limits (VG) -1 V/0V Gate Voltage (V ) (self-biased mode) 0 V G Drain Current (ID) 1000 mA Quiescent Drain Current (I ) 900 mA DQ Gate Current (+IG TCH = 150 C) -5.28/24.8 mA Operating Drain Current (I ) 800-975 mA D DRIVE Power Dissipation, T = 85 C, BASE Electrical specifications are measured at specified test 4.50 W TCH = 200 C, CW operation (PDISS) conditions. Specifications are not guaranteed over all 1 Input Power, CW, 50 13 dBm recommended operating conditions. 1 Input Power, CW, VSWR 10:1 13 dBm Channel Temperature (T ) 200 C CH Notes: 1. V = 6 V, V = 0 V, T = 85 C D G BASE Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions, unless otherwise noted: T = 25 C, VD = 6 V, VG = 0 V/IDQ ~ 900 mA, VSW = 0 V, part mounted to EVB Output Power and PAE pulse conditions: PW = 100 us, DC = 20% Parameter Min Typical Max Units Operating Frequency Range 2.7 4.0 GHz Output Power (Pulsed, Pin = 8 dBm) > 30.7 dBm Power Added Efficiency (Pulsed, Pin = 8 dBm) > 22 % Small Signal Gain > 24 dB Input Return Loss > 7 dB Output Return Loss > 11 dB IM3 (P /tone 23 dBm, 3.5 GHz) < 32 dBc OUT nd 2 Harm. Suppression ( POUT 30 dBm, 3.5 GHz ) < 39 dBc rd 3 Harm. Suppression ( POUT 30 dBm, 3.5 GHz ) < 44 dBc Output Power Temperature Coefficient -0.004 dB/C Data Sheet Rev A, July 2019 Subject to change without notice 2 of 15 www.qorvo.com