T GA2803-SM CATV TIA/Gain Block Applications HFC Nodes CATV Line Amplifiers Head End Equipment Top View Bottom View Product Features Frequency Range: 40MHz1GHz Measured Performance 20dB Flat Gain (1) 800 Transimpedance 75 Output TOI (1) <5pA/ Hz Equivalent Input Noise Current 55 1.5dB 75 Noise Figure 51 Ultra-Low Distortion (+45dBm IP3 typ.) Low DC Power Consumption 47 Single Supply Bias (+8V) 43 Proven GaAs Technology 20 Pin 4.0x4.0x0.9mm QFN Package 39 Notes: 35 0 100 200 300 400 500 600 700 800 900 1. Includes 1:1 balun, No photodiode or auto-transformer Frequency (MHz) Input Referred Current Noise General Description with High Imp edance source 6 The TriQuint TGA2803-SM is an ultra-linear, packaged TIA/Gain Block which operates from 40MHz to 5 1000MHz. 4 3 The TGA2803-SM typically provides flat gain along with ultra-low distortion. It also provides high output power 2 with low DC power consumption. 1 This amplifier is ideally suited for use in CATV 0 0 200 400 600 800 1000 1200 distribution systems or other applications requiring Frequency (MHz) extremely low noise and distortion. Typical 75 Gain w/External Balun Losses Removed Demonstration Boards are available. 24 Lead-free and RoHS compliant. 20 16 12 Ordering Information 8 Part No. Description 4 TGA2803-SM QFN 20L 4x4 Surface Mount 0 TGA2803-SM-EVB 0 200 400 600 800 1000 1200 Frequency (MHz) Standard T/R size = 2,500 pieces on a 7 reel. Preliminary Datasheet: Rev. A 10-09-14 - 1 of 14 - Disclaimer: Subject to change without notice 2014 TriQuint www.triquint.com Gain (dB) OTOI (dBm) Noise Current(pA/rt(Hz)) T GA2803-SM CATV TIA/Gain Block Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Bias Supply Voltage (V ) +15 V Bias Supply Voltage +8 V DD Total Bias Supply Current (IDD) 500 mA Bias Supply Current 350 mA Total RF Input Power (P ) 77 dBmV Gate 1 Voltage (Pin 19) +0.90 V IN Storage Temperature (TSTG) 65 to 150C Gate 2 Voltage (Pin 7) +2.66 V Operation of this device outside the parameter ranges given T -30 25 +85 C AMB above may cause permanent damage. 6 Tj (for>10 hours MTTF) 200 C Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. RF Specifications Test conditions unless otherwise stated: TA=+25C, VDD=+8V, Using electrical application circuit on pg. 9 Parameter Symbol Min Typ Max Units Bandwidth BW 40 1218 MHz (1) Power Gain S21 20 dB Gain Flatness GF 0.3 dB (1) Adjacent Channel Power Ratio ACPR1 63 66 dBc Noise Figure NF 1.5 dB Transimpedance TZ 800 (2) Equivalent Input Current Noise In 5 pA/rtHz (3) Two-Tone, Third-Order Intercept (450MHz) IP3 +46 dBm (3) Two-Tone, Third-Order Intercept (750MHz) IP3 +42 dBm Input Return Loss IRL 10 dB Output Return Loss ORL 17 dB (4) Drain Current ID 250 350 500 mA Saturated Output Power (750MHz) P sat +28 dBm Notes: 1. Measured at 858MHz with a single 6MHz wide channel, 256QAM signal at 62 dBmV average output power (into 75 ). ACP is measured in the channel that is offset from the signal band edge by 750kHz to 6MHz. Gain is also measured at this frequency. 2. Measured with open-circuited input 3. Measured at +16dBm output power per tone 4. Increasing drain current will improve linearity of device Thermal Information Parameter Conditions T (C) T (HRS) CH JC (C/W) M V = +8V, I = 350mA JC Thermal Resistance D D 128 15.4 7.2 E+6 P = 2. 8W (channel to backside of package) DISS Notes: 1. Worst case condition with no RF applied, 100% of DC power is dissipated. Package backside temperature at +85C. Preliminary Datasheet: Rev. A 10-09-14 - 2 of 14 - Disclaimer: Subject to change without notice 2014 TriQuint www.triquint.com