TGA2224 3238 GHz 5 Watt GaN Amplifier Product Overview Qorvos TGA2224 is a wide band power amplifier MMIC fabricated on Qorvos production 0.15 um GaN on SiC process (QGaN15). Covering 3238 GHz, the TGA2224 provides greater than 37 dBm (5 W) of saturated output power and 16 dB of large-signal gain while achieving > 20% power-added efficiency. The TGA2224 RF ports are DC coupled to ground for improved ESD performance. Both ports are matched to 50 ohms. The TGA2224 can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems. Key Features Lead-free and RoHS compliant. Frequency Range: 3238 GHz P (P =21 dBm): > 37 dBm SAT IN PAE (P =21 dBm): > 20 % IN Power Gain (PIN=21 dBm): > 16 dB Small Signal Gain: > 25 dB Bias (pulsed): VD = 26 V, IDQ = 320 mA Bias (CW): V = 24 V, I = 320 mA D DQ Die Dimensions: 3.43 x 1.47 x 0.05 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Communications Radar Satcom 2 3 4 5 6 EW Space communications Point to point communications 1 7 RF IN RF OUT Ordering Information 12 11 10 9 8 Part No. Description 32 38 GHz 10 W GaN Amplifier TGA2224 (10 Pcs.) TGA2224EVB1 Evaluation Board for TGA2224 Data Sheet Rev. D, February 2021 Subject to change without notice 1 of 21 www.qorvo.com TGA2224 32 38 GHz 5 Watt GaN Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD, Pulsed) 26 V Gate Voltage Range (VG) -4 V to 0 V Drain Voltage (VD, CW) 24 V Drain Current (ID1/ID2/ID3) (T=85 C) 0.53/0.85/1.72 A Drain Current (IDQ) 320 mA Gate Current (I ) See plot pg. 16 Operating Temperature 40 to +85 C G Power Dissipation (PDISS), 85 C 30 W Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Input Power (PIN), 50 , CW, 27 dBm recommended operating conditions. V =24 V, I =320 mA, 85 C D DQ Input Power (P ), 3:1 VSWR, CW, IN 27 dBm VD=24 V, IDQ=320 mA, 85 C Soldering Temperature (30 seconds, 320 C maximum) Storage Temperature -55 to +125 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Data Sheet Rev. D, February 2021 Subject to change without notice 2 of 21 www.qorvo.com