X-On Electronics has gained recognition as a prominent supplier of MAMG-100227-010C0L RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MAMG-100227-010C0L RF Amplifier are a product manufactured by MACOM. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MAMG-100227-010C0L MACOM

MAMG-100227-010C0L electronic component of MACOM
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Part No.MAMG-100227-010C0L
Manufacturer: MACOM
Category: RF Amplifier
Description: RF Amplifier 10W 2-STAGE HYBRID GaN Transistor
Datasheet: MAMG-100227-010C0L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 295.8228 ea
Line Total: USD 295.82 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 240.7206

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 295.8228

   
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RoHS - XON
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We are delighted to provide the MAMG-100227-010C0L from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MAMG-100227-010C0L and other electronic components in the RF Amplifier category and beyond.

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10 W 2-Stage Hybrid GaN Module 225 - 2600 MHz MAMG-100227-010C0L Rev. V6 Features Functional Schematic 2 Compact Size (14 x 18 mm ) GaN-on-Si Technology Fully Matched at Input and Output 28 V Operation CW Output Power >10 W, 40% PAE and 22 dB Power Gain Lead-Free Package with Heat Sink RoHS* Compliant Applications Tactical Military Communications LMR Wireless (public safety) Description The MAMG-100227-010C0L is a broadband 2-stage GaN-on-Si hybrid power amplifier module in 2,3 Pin Configuration an air-cavity laminate package. A gold-plated copper heat sink is attached to the bottom side of the laminate substrate. The package can be accessed from the top or the bottom allowing for live bug or 1 NC 9 GND dead bug mounting. 2 V 10 V G2 D2 3 GND 11 GND 4 GND 12 GND 1 Ordering Information 5 RF 13 RF IN OUT 6 GND 14 GND MAMG-100227-010C0L JEDEC tray (84 per tray) 7 V 15 V G1 D1 MAMG-1U0227-010C0L Sample Board 8 GND 16 GND 1. All sample boards include a part soldered down to the board. 2. MACOM recommends connecting unused package pins to ground. 3. The package heat sink must be connected to RF, DC, and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: 10 W 2-Stage Hybrid GaN Module 225 - 2600 MHz MAMG-100227-010C0L Rev. V6 4 Electrical Specifications : Parameter Test Conditions Min. Typ. Max. Units 28 V Specifications P = 16 dBm 225 MHz IN P = 18 dBm 450 MHz IN Output Power (P ) 39.5 41 dBm OUT P = 18 dBm 1400 MHz IN P = 16 dBm 2600 MHz IN P = 16 dBm 225 MHz 25 IN P = 18 dBm 450 MHz 23 IN Power Gain (G ) dB P P = 18 dBm 1400 MHz 23 IN P = 16 dBm 2600 MHz 25 IN P = 16 dBm 225 MHz 46 50 IN P = 18 dBm 450 MHz 39 43 IN Drain Efficiency ( ) % D P = 18 dBm 1400 MHz 30 37 IN P = 16 dBm 2600 MHz 33 38 IN P = 16 dBm 225 MHz -14 IN P = 18 dBm 450 MHz -15 IN Input Return Loss (I ) dB RL P = 18 dBm 1400 MHz -15 IN P = 16 dBm 2600 MHz -8 IN 33.5 dBm/tone, 225 MHz -30 -26 F -F = 1.25 MHz 2 1 3rd Order Intermodulation 450 MHz -31 -26 dBc Distortion (IM3) 1400 MHz -43 -26 31.0 dBm/tone, 2600 MHz -36 -25 F -F = 1.25 MHz 2 1 Load Mismatch Tolerance No Damage or Oscillations, 5:1 (VSWR ) All Phases T 36 V Specifications Output Power (P ) 42.2 43 dBm OUT Power Gain (G ) P = 18 dBm 320 MHz 25 dB P IN Drain Efficiency ( ) 49 51 % D 4. Measured in MACOMs evaluation circuit (see page 4). Thermal Characteristics Parameter Symbol Test Conditions Units Min. Typ. Max. Channel-to-Case T = 85C, RF applied, P = 22.5 W C/W 4.35 5 CH-C CASE DISS Thermal Resistance 5. The channel temperature (T ) is determined using Raman and simulation techniques. For more details about this measurement contact CH the local application team. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
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