X-On Electronics has gained recognition as a prominent supplier of QPA2609TR7 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. QPA2609TR7 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

QPA2609TR7 Qorvo

QPA2609TR7 electronic component of Qorvo
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Part No.QPA2609TR7
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 7-14GHz NF 1.1dB SSGain 26dB
Datasheet: QPA2609TR7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 78.3739 ea
Line Total: USD 78.37 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 78.3739
25 : USD 52.8156
100 : USD 41.575
250 : USD 34.7581

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Series
Brand
Number Of Channels
Development Kit
Input Return Loss
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QPA2609TR7 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPA2609TR7 and other electronic components in the RF Amplifier category and beyond.

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QPA2609 7 14GHz GaAs Low Noise Amplifier General Description Qorvos QPA2609 is a packaged, high-performance, low noise amplifier fabricated on Qorvos production 90 nm pHEMT (QPHT09) process. Covering 7 14 GHz, the QPA2609 provides 26 dB small signal gain with a low noise figure of 1.1dB. The device can deliver 20dBm of power with P1dB of 18 dBm, while supporting an IM3 level of 50 dBc (at Pout=0 dBm / tone). Packaged in a small 4 mm x 4 mm plastic overmold QFN, the QPA2609 is matched to 50 ohms with integrated DC blocking caps on both I/O ports for easy handling and simple system integration. The QPA2609 high performance and ease of handling makes it an ideal component for satellite and point to point communication system applications. Functional Block Diagram Product Features Frequency Range: 714GHz Noise Figure: 1.1 dB Small Signal Gain: 26 dB P1dB: 18 dBm IM3: 50 dBc ( Pout=0 dBm/tone) Bias: V = 3.5 V, I = 120 mA, V = 0.46 V D DQ G Plastic Overmold Package Package Dimensions: 4.0 x 4.0 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Ordering Information Satellite Communications Part No. Description QPA2609S2 QPA2609 Sample Bag, Qty 2 Point to Point Communications QPA2609SR QPA2609 Tape and Reel, Qty 100 Military and Commercial Radar Applications QPA2609TR7 QPA2609 Tape and Reel, Qty 750 QPA2609EVB1 QPA2609 Evaluation Board Data Sheet Rev. D, May 2020 Subject to change without notice - 1 of 17 - www.qorvo.com QPA2609 7 14GHz GaAs Low Noise Amplifier Absolute Maximum Ratings Parameter Value Units Drain Voltage (V ) 4.5 V D Drain Current (I /I /I ) 96/115/192 mA D1 D2 D3 Gate Voltage Range -1.3 to 0 V Gate Current (I /I /I at 125 C) 5.0/5.0/6.6 mA G1 G2 G3 RF Input Power (50 , 85 C) 20 dBm Channel Temperature, TCH 175 C Mounting Temperature (30 seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may reduce device reliability. Recommended Operating Conditions Parameter Value Units Drain Voltage 3.5 V Drain Current (quiescent, I ) 120 mA DQ Gate Voltage (typical) 0.46 V Operating Temperature Range 40 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, 25 C. Data de-embedded to device reference planes Parameter Min Typical Max Units Frequency 7 14 GHz Small Signal Gain ( 7 to 14 GHz ) 26 dB Small Signal Gain ( 8 to 12.7 GHz ) 23.5 26 dB Noise Figure ( 7 to 14 GHz ) 1.1 dB Noise Figure ( 8 to 12.7 GHz ) 1.1 1.4 dB 1-dB Compression Point 18 dBm Input Return Loss 12 dB Output Return Loss 16 dB RD 3 Order Intermodulation level (Pout=0 dBm/tone) 50 dBc Output TOI (Pout=0 dBm/tone) 23 dBm Gain Temperature Coefficient 0.013 dB/C Data Sheet Rev. D, May 2020 Subject to change without notice - 2 of 17 - www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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