HMC1022A v01.1215 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Typical Applications Features The hm C1022A is ideal for: h igh p1dB o utput power: 22 dBm Test instrumentation h igh psat o utput power: 24 dBm microwave r adio & Vs AT h igh Gain: 12 dB military & s pace h igh o utput ip3: 32 dBm Telecom infrastructure s upply Voltage: +10 V 150 mA f iber o ptics 50 o hm matched input/o utput Die s ize: 2.82 x 1.50 x 0.1 mm Functional Diagram General Description The hmC1022A is a GaAs phe mT mmiC Distrib- uted power Amplifier which operates between DC and 48 Ghz. The amplifier provides 12 dB of gain, 32 dBm output ip3 and +22 dBm of output power at 1 dB gain compression while requiring 150 mA from a +10 V supply. The hmC1022A exhibits a slightly positive gain slope from 10 to 35 Ghz, making it ideal for ew, eCm, r adar and test equipment applications. The hmC1022A amplifier i/os are internally matched to 50 ohms facilitating integra- tion into multi-Chip-modules (mCms). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). 1 Electrical Specifications, T = +25 C, Vdd = +10 V, Vgg2 = +4.5 V, Idd = 150 mA A parameter min. Typ. max. min. Typ. max. min. Typ. max. Units f requency r ange DC - 16 16 - 36 36 - 48 Gh z Gain 9.5 11.5 9.5 12 9.5 11.5 dB Gain f latness 0.5 0.3 1.1 dB Gain Variation o ver Temperature 0.012 0.018 0.041 dB/ C input r eturn l oss 18 16 15 dB o utput r eturn l oss 28 22 18 dB o utput power for 1 dB Compression (p1dB) 20 22 19.5 21.5 16 19 dBm s aturated o utput power (psat) 24.5 23.5 21 dBm o utput Third o rder intercept (ip 3) 35 32 29 dBm n oise f igure 4 5.5 8 dB s upply Current 150 150 150 mA (idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 1 Adjust Vgg1 between -2 to 0 V to achieve idd = 150 mA typical. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 Order online at www.analog.com 1 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Preliminary Amplifiers - l in eAr & pow er - ChipHMC1022A v01.1215 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 48 GHz Pad Descriptions pad n umber f unction Description interface s chematic This pad is DC coupled and matched 1 rfin to 50 o hms. Blocking capacitor is required. Gate control 2 for amplifier. Attach bypass 2 VGG2 capacitor per application circuit herein. f or nominal operation +4.5V should be applied to Vgg2. l ow frequency termination. Attach bypass 4, 7 ACG2, ACG4 capacitor per application circuit herein. l ow frequency termination. Attach bypass 3 ACG1 capacitor per application circuit herein. rf output for amplifier. Connect DC bias (Vdd) network to 5 rfo UT & VDD provide drain current (idd). s ee application circuit herein. l ow frequency termination. Attach bypass 6 ACG3 capacitor per application circuit herein. Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. please 8 VGG1 follow mmiC Amplifier Biasing procedure application note. Die Bottom Gn D Die bottom must be connected to rf /DC ground. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at www.analog.com 2 Application Support: Phone: 1-800-ANALOG-D Preliminary Amplifiers - l in eAr & pow er - Chip