QPA2705 5 W, 28 V, 2.5 2.7 GHz GaN PA Module Product Description The QPA2705 is an integrated 2-stage Power Amplifier Module designed for Metro Cell Base Station applications with 5 W RMS at the device output. The module is 50 input and output and requires minimal external components. The module is also compact and 36 Pin 6x10 mm Plastic Package offers a much smaller footprint than traditional discrete component solutions. Product Features The QPA2705 incorporates a Doherty final stage delivering Operating Frequency Range: 2500-2700 MHz high power added efficiency for the entire module at 5 W Band 41, Band 7 average power. Operating Drain Voltage: +28 V RoHS compliant. 50 Input / Outpu t Integrated Doherty Final Stage Gain at 5 W avg.: 34.1 dB Functional Block Diagram Power Added Efficiency at 5 W avg.: 41.6% 6x10 mm Plastic Surface Mount Package Applications 5G Massive MIMO W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications Ordering Information Part No. Description QPA2705SB Sample Bag 5 Pieces QPA2705SR Short Reel 100 Pieces QPA2705TR13 13 Reel 2500 Pieces QPA2705EVB4B01 Tested 2.5 2.7 GHz EVB - 1 of 11 - Rev. D www.qorvo.com QPA2705 5 W, 28 V, 2.5 2.7 GHz GaN PA Module 2 Absolute Maximum Ratings Recommended Operating Conditions Parameter Range/ Value Units Parameter Min Typ Max Units Breakdown Voltage, BV 120 V DG Gate Voltage (VG1) 2.6 V Gate Voltage (VG1,2,3) 7 to +2 V Gate Voltage (VG2) 4.4 V Drain Voltage (V ) +40 V D1,2,3 Gate Voltage (V ) 2.6 V G3 RF Input Power +22 dBm Drain Voltage (VD1,2,3) +28 V VSWR Mismatch, P1dB Quiescent Current (IDQ1) 50 mA Pulse (10% duty cycle, 10:1 Quiescent Current (I ) 75 mA DQ3 100 width), T = 25C Electrical performance is measured under conditions noted in the Storage Temperature 65 to +150 C electrical specifications table. Specifications are not guaranteed Operation of this device outside the parameter ranges given over all recommended operating conditions. above may cause permanent damage. Electrical Specifications Parameter Conditions Min Typ Max Units Frequency Range 2500 2700 MHz Driver Quiescent Current 50 mA Carrier Quiescent Current 75 mA Gain P = 37 dBm 34.1 dB AVG P3dB 3 dB PAR compression 45.6 dBm Power Added Efficiency P = 37 dBm 41.6 % AVG Raw ACLR PAVG = 37 dBm 29 dBc Test conditions unless otherwise noted: V = +28V, I = 50mA, I = 75 mA, V = 4.4 V (typical), T = +25C, single-carrier, D1,2,3 DQ1 DQ3 G2 20 MHz LTE signal with 7.8 dB PAR 0.01% CCDF, from EVB measurements at 2600 MHz. Thermal and Reliability Information Parameter Test Conditions Value Units T = +85C, T = 116C Thermal Resistance, Peak IR Surface CASE CH 4.2 C/W Temperature at Average Power ( ) JC CW: P = 7.3 W, P = 5 W DISS OUT Notes: 1. Thermal resistance measured to package backside. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates - 2 of 11 - Rev. D www.qorvo.com