QPA1010 7.9 11.0GHz 15W GaN Power Amplifier Product Description Qorvos QPA1010 is a X-band high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The QPA1010 operates from 7.9 11 GHz and typically provides 15 W saturated output power with power-added efficiency of 38% and large-signal gain of 18 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. QPA1010 can also support a variety of operating conditions to best support system requirements. With good thermal 24-Lead 4.5x5.0x1.72mm Air Cavity Laminate Package properties, it can support a range of bias voltages and will perform well under both CW and pulse operations. The QPA1010 is matched to 50 with integrated DC Product Features blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance and operational Frequency Range: 7.911GHz flexibility allow it support satellite communication and data POUT: 42dBm at PIN = 24dBm links, as well as, military and commercial radar systems. PAE: 38% at P = 24dBm IN Lead-free and RoHS compliant. Large Signal Gain: 18 dB at PIN = 24 dBm Small Signal Gain: 25 dB Integrated Power Detector Bias: VD = 24V, IDQ = 600 mA Pulsed V : PW =100 S, DC = 10% D Package Dimensions: 4.5 x 5.0 x 1.72mm Performance is typical across frequency. Please Functional Block Diagram reference electrical specification table and data plots for more details. Applications Satellite Communications Data Links Military and Commercial Radar Ordering Information Part No. Description QPA1010 7.911GHz 15W GaN Power Amplifier QPA1010S2 Samples (2 pcs. pack) QPA1010PCB4B01 Evaluation Board Data Sheet Rev. H, May 2021 Subject to change without notice - 1 of 26 - www.qorvo.com QPA1010 7.9 11.0GHz 15W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 24 V Gate Voltage Range (V ) 8 to 0V Drain Current (I ) 600 mA G DQ Drain Current (I /I ) 672 mA / 1440 mA Gate Voltage Range (V ) -2.9 to -1.5 V D1 D2 G Gate Current (I ) See chart, pg. 21 Temperature (T ) -40 to +85 C G BASE Electrical specifications are measured at specified test Power Dissipation (P ), 85C, CW 38 W DISS conditions. Specifications are not guaranteed over all Input Power (PIN), CW, 50, 30 dBm recommended operating conditions. V =28 V, I =600 mA, 85 C D DQ Input Power (P ), CW, VSWR 3:1, IN 30 dBm VD=28 V, IDQ=600 mA 85 C Mounting Temperature (30 seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Data Sheet Rev. H, May 2021 Subject to change without notice - 2 of 26 - www.qorvo.com