QPA1011 7.9 11.0GHz 25W GaN Power Amplifier Product Description Qorvos QPA1011 is a X-band high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The QPA1011 operates from 7.9 11 GHz and typically provides 25 W saturated output power with power-added efficiency of 40% and large-signal gain of 19.5 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. QPA1011 can also support a variety of operating conditions to best support system requirements. With good thermal 24-Lead 4.5x5.0x1.72mm Air Cavity Laminate Package properties, it can support a range of bias voltages and will perform well under both CW and pulse operations. The QPA1011 is matched to 50 with integrated DC Product Features blocking capacitors on both RF I/O ports simplifying system Frequency Range: 7.911GHz integration. The wideband performance and operational flexibility allow it support satellite communication and data P (P = 25 dBm): 44.5dBm OUT IN links, as well as, military and commercial radar systems. PAE (PIN = 25 dBm): 40% Power Gain (P = 25 dBm): 19.5 dB IN IM3 ((P /Tone = 38 dBm): -20 dBc Lead-free and RoHS compliant. OUT Small Signal Gain: 28 dB Integrated Power Detector Bias: V = 24V, I = 1200 mA, V = 1.9V Typical D DQ G Pulsed VD: PW =100 S, DC = 10% Package Dimensions: 4.5 x 5.0 x 1.72mm Functional Block Diagram Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Satellite Communications Data Links Military and Commercial Radar Ordering Information Part No. Description QPA1011 7.911GHz 25W GaN PA QPA1011SR 100 Piece 7 Reel QPA1011TR7 250 Piece 7 Reel QPA1011PCB4B01 Evaluation Board Data Sheet Rev. E, May 2021 - 1 of 27 - www.qorvo.com QPA1011 7.9 11.0GHz 25W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 24 28 V Gate Voltage Range (V ) 8 to 0V Drain Current (I ) 1200 mA G DQ Drain Current (I /I ) 672 mA / 2880 mA Gate Voltage Range (V ) -2.9 to -1.5 V D1 D2 G Gate Current (I ) See chart, pg. 21 Temperature (T ) -40 to +85 C G BASE Electrical specifications are measured at specified test Power Dissipation (P ), 85C, CW 70 W DISS conditions. Specifications are not guaranteed over all Input Power (PIN), CW, 50, 30 dBm recommended operating conditions. V =28 V, I =1200 mA, 85 C D DQ Input Power (P ), CW, VSWR 3:1, IN 30 dBm VD=28 V, IDQ=1200 mA 85 C Mounting Temperature (30 seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 7.9 11 GHz Output Power (P = 25dBm) 7.9 GHz 44.2 45.5 IN 9.5 GHz 45 46.2 dBm 11.0 GHz 43.9 45 Power Added Efficiency (PIN = 25dBm) 7.9 GHz 36 40 9.5 GHz 35 40 % 11.0 GHz 35 40 rd 3 Order Intermodulation Level -20 dBc (POUT/Tone= 38 dBm) Small Signal Gain, S21 28 dB Input Return Loss, IRL 15 dB Output Return Loss, ORL 10 dB Output Power Temperature Coefficient (PIN = 25dBm, 0.006 dBm/C T = 2585 C) BASE S21 Temperature Coefficient ( TBASE = 2585 C) 0.053 dB/C Gate Leakage (V = 10 V, V = -4 V) -13.2 0.1 mA D G Notes: 1. Test conditions, unless otherwise noted: Pulsed VD, VD = 24 V, IDQ = 1200 mA, PW = 100 S, DC = 10%, VG = 1.9 V typical, T = 25 C, Z = 50 BASE 0 2. TBASE is back side of package Data Sheet Rev. E, May 2021 - 2 of 27 - www.qorvo.com