NLB-300 NLB-300 Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz The NLB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and Package: Micro-X, 4-pin, Plastic microwave amplification needs. This 50 gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed Features performance for small-signal applications. Designed with an external Reliable, Low-Cost HBT Design bias resistor, the NLB-300 provides flexibility and stability. The NLB- 13.0dB Gain, +11.1dBm P1dB at 2Ghz 300 is packaged in a low cost, surface-mount plastic package, High P1dB of providing ease of assembly for high-volume tape-and-reel +14.1dBm at 6.0GHz requirements. +12.7dBm at 10.0GHz Single Power Supply Operation 50 I/O Matched for High Frequency Use Applications Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Functional Block Diagram (PTP/PMP/LMDS/UNII/VSAT/ WLAN/Cellular/DWDM) Ordering Information NLB-300 Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz NLB-300-T1 Tape & Reel, 1000 Pieces NLB-300-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designers Tool Kit RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131015 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. 1 of 9 NLB-300 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit RF Input Power +20 dBm Power Dissipation 300 mW RoHS (Restriction of Hazardous Device Current 70 mA Substances): Compliant per EU Directive 2011/65/EU. Channel Temperature 200 C Operating Temperature -45 to +85 C Exceeding any one or a combination of the Absolute Storage Temperature -65 to +150 C Maximum Rating conditions may cause permanent Exceeding any one or a combination of these limits may cause permanent damage. damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max General Performance V = +3.8V, I = 50mA, Z = 50, T = +25C D CC 0 A Small Signal Power Gain, S21 12.0 13.0 dB f = 0.1GHz to 1.0GHz 10.7 dB f = 1.0GHz to 4.0GHz 8.9 dB f = 4.0GHz to 6.0GHz 8.5 8.9 dB f = 6.0GHz to 10.0GHz 8.5 dB f = 10.0GHz to 12.0GHz Gain Flatness, GF 0.1 dB f = 5.0GHz to 10.0GHz Input VSWR 2.2:1 f = 0.1GHz to 4.0GHz 2.8:1 f = 4.0GHz to 7.0GHz 2.0:1 f = 7.0GHz to 12.0GHz Output VSWR 2.2:1 f = 0.1GHz to 4.0GHz 2.9:1 f = 4.0GHz to 7.0GHz 2.4:1 f = 7.0GHz to 12.0GHz Output Power at -1dB 11.1 dBm f = 2.0GHz Compression, P1dB 14.1 dBm f = 6.0GHz 12.7 dBm f = 10.0GHz Noise Figure, NF 4.9 dB f = 3.0GHz Third Order Intercept, IP3 +28.6 dBm f = 2.0GHz +27.0 f = 6.0GHz Reverse Isolation, S12 -16 dB f = 0.1GHz to 20.0GHz Device Voltage, V 3.6 3.8 4.2 V D Gain Temperature Coefficient, -0.0015 dB/C / R F Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131015 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 9