NBB-402Cas- cadable Broadband GaAs MMIC Amplifier DC to 8GHz NBB-402 Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz Package Style: MPGA, Bowtie, 3 x 3, Ceramic Features Pin 1 Reliable, Low-Cost HBT Indicator Design 1 2 3 15.0dB Gain, +15.8dBm RF OUT Ground P1dB at 2GHz 8 9 4 High P1dB of +15.4dBm at Ground RF IN 6.0GHz 6 5 Single Power Supply 7 Operation 50 I/O Matched for High Frequency Use Applications Functional Block Diagram Narrow and Broadband Commercial and Military Product Description Radio Designs The NBB-402 cascadable broadband InGaP/GaAs MMIC amplifier is a Linear and Saturated low-cost, high-performance solution for general purpose RF and micro- Amplifiers wave amplification needs. This 50 gain block is based on a reliable HBT Gain Stage or Driver proprietary MMIC design, providing unsurpassed performance for small- Amplifiers for MW signal applications. Designed with an external bias resistor, the NBB-402 Radio/Optical Designs provides flexibility and stability. The NBB-402 is packaged in a low-cost, (PTP/PMP/LMDS/UNII/ surface-mount ceramic package, providing ease of assembly for high-vol- VSAT/WiFi/Cellular/DWDM) ume tape-and-reel requirements. NBB-402Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz NBB-402 Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz NBB-402-T1 Tape and Reel, 1000 Pieces NBB-402-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designers Tool Kit RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS130418 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 8NBB-402 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum RF Input Power +20 dBm Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Power Dissipation 300 mW tions is not implied. The information in this publication is believed to be accurate and reliable. However, no Device Current 70 mA responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Channel Temperature 150 C license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended applica- Operating Temperature -45 to +85 C tion circuitry and specifications at any time without prior notice. Storage Temperature -65 to +150 C RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric Exceeding any one or a combination of these limits may cause permanent materials and red phosphorus as a flame retardant, and <2% antimony in damage. solder. Nominal Operating Parameters Specification Parameter Unit Condition Min. Typ. Max. V = +3.8V, I = 47mA, Z = 50, T = +25C Overall D CC 0 A Small Signal Power Gain, S21 15.0 17.1 dB f = 0.1GHz to 1.0GHz 15.8 dB f = 1.0GHz to 4.0GHz 14.3 dB f = 4.0GHz to 6.0GHz 12.0 12.5 dB f = 6.0GHz to 8.0GHz Gain Flatness, GF 0.8 dB f = 0.1GHz to 5.0GHz Input and Output VSWR 1.45:1 f = 0.1GHz to 4.0GHz 1.30:1 f = 4.0GHz to 8.0GHz 1.80:1 f = 8.0GHz to 10.0GHz Bandwidth, BW 6.3 GHz BW3 (3dB) Output Power at 15.8 dBm -1dB Compression, P1dB f = 2.0GHz 15.4 dBm f = 6.0GHz 15.5 dBm f = 8.0GHz Noise Figure, NF 4.3 dB f = 3.0GHz Third Order Intercept, IP3 +26.0 dBm f = 2.0GHz Reverse Isolation, S12 -17.5 dB f = 0.1GHz to 12.0GHz Device Voltage, V 3.6 3.8 4 V D Gain Temperature Coefficient, -0.0015 dB/C G /T T MTTF versus Temperature at I = 50mA CC Case Temperature 85 C Junction Temperature 120.9 C MTTF >1,000,000 hours Thermal Resistance 196C/W JC J T T CASE --------------------------- = CW att JC V I D CC 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 8 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS130418