NBB-502 NBB-502 Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz Package: MPGA, Bowtie, 3x3, Ceramic The NBB-502 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and Features microwave amplification needs. This 50 gain block is based on a Reliable, Low-Cost HBT Design reliable HBT proprietary MMIC design, providing unsurpassed 19.0dB Gain, +13.0dBm P1dB at 2GHz performance for small-signal applications. Designed with an external bias resistor, the NBB-502 provides flexibility and stability. The NBB- High P1dB of +14.0dBm at 6.0GHz 502 is packaged in a low cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel Single Power Supply Operation requirements. It is available in either 1,000 or 3,000 piece-per-reel 50 I/O Matched for High Frequency Use quantities. Applications Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/LMDS/UNII/VSAT/ WiFi/Cellular/DWDM) Functional Block Diagram Ordering Information NBB-502 Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz NBB-502-T1 Tape & Reel, 1000 Pieces NBB-502-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designers Tool Kit RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131015 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. 1 of 9 NBB-502 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit RF Input Power +20 dBm Power Dissipation 300 mW RFMD Green: RoHS compliant per EU Device Current 70 mA Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of Channel Temperature 150 C antimony trioxide in polymeric materials Operating Temperature -45 to +85 C and red phosphorus as a flame retardant, and <2% antimony solder. Storage Temperature -65 to +150 C Exceeding any one or a combination of the Absolute Exceeding any one or a combination of these limits may cause permanent damage. Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max General Performance V = +3.9V, I = 35mA, Z = 50, T = +25C D CC 0 A Small Signal Power Gain, S21 19.0 20.5 dB f = 0.1GHz to 1.0GHz 19.0 dB f = 1.0GHz to 2.0GHz 16.0 17.0 dB f = 2.0GHz to 4.0GHz Gain Flatness, GF 0.8 dB f = 1.0GHz to 3.0GHz Input and Output VSWR 1.55:1 f = 0.1GHz to 4.0GHz 1.50:1 f = 4.0GHz to 6.0GHz 1.55:1 f = 6.0GHz to 10.0GHz Bandwidth, BW 4.2 GHz BW3 (3dB) Output Power at -1dB 13.0 dBm f = 2.0GHz Compression, P1dB 14.0 dBm f = 6.0GHz Noise Figure, NF 4.0 dB f = 3.0GHz Third Order Intercept, IP3 +23.0 dBm f = 2.0GHz Reverse Isolation, S12 -17.0 dB f = 0.1GHz to 10.0GHz Device Voltage, V 3.6 3.9 4.2 V D -0.0015 Gain Temperature Coefficient, dB/C / R F Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131015 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 9