X-On Electronics has gained recognition as a prominent supplier of QPA1027 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. QPA1027 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

QPA1027 Qorvo

QPA1027 electronic component of Qorvo
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Part No.QPA1027
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 2.8-3.5GHz 60W GaN Power Amplifier
Datasheet: QPA1027 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 670.8284
30 : USD 532.6776
100 : USD 517.1627
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Series
Brand
Number Of Channels
Development Kit
Input Return Loss
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QPA1027 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPA1027 and other electronic components in the RF Amplifier category and beyond.

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QPA1027 2.8 3.5 GHz 60 W GaN Power Amplifier Product Overview Qorvos QPA1027 is a packaged high-power, S-band amplifier fabricated on Qorvos production 0.25 um GaN on SiC High Voltage process (QGaN25HV). Covering 2.83.5 GHz, the QPA1027 provides 60 W of saturated output power and 22 dB of large-signal gain while achieving 55% power-added efficiency. The QPA1027 is packaged in a plastic overmold QFN with a Cu paddle offering easy handling with good thermal properties. As a result, the QPA1027 has bias flexibility allowing the user to vary the voltage to achieve optimum Key Features system performance while maintaining high reliability. Frequency Range: 2.8 3.5 GHz The QPA1027 is matched to 50 ohms with integrated DC PSAT (PIN=26 dBm): 48 dBm blocking caps on both I/O ports. With the high performance, PAE (P =26 dBm): 55 % IN good thermal characteristics and ease of handling and Small Signal Gain: > 31 dB system integration, the QPA1027 is ideal for radar and Bias: Pulsed V = 50 V, I = 300 mA, V = 2.7 V typ. D DQ G satellite communication systems. Package Dimensions: 6.0 x 6.0 x 0.85 mm Lead-free and RoHS compliant. Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications S-Band Radar V V V D1 G D2 Satellite Communication RF RF IN OUT Ordering Information Part No. Description QPA1027 S-Band 60 W GaN Power Amplifier QPA1027S2 Samples (2 pcs. pack) QPA1027TR7 250 pieces on a 7 reel (standard) QPA1027EVB01 Evaluation Board for QPA1027 V G Data Sheet Rev. B, May 2021 1 of 23 www.qorvo.com QPA1027 2.8 3.5 GHz 60 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Range Parameter Min Typ Max Units Drain Voltage (V ) +55 V Pulse (not recommended CW) D Drain Voltage (V ), Pulsed 50 50 V D Gate Voltage Range (V ) 6 to 0 V G Drain Current, Quiescent (I ) 300 mA DQ Drain Current, average (ID1, ID2) 0.192 A, 2.3 A Drain Current, RF (I ) See charts page 3 - 7 mA D Drive Gate Current (IG) See chart Gate Voltage Typ. Range (VG) 2 to -3.4 V Power Dissipation (PDISS), 80 W Pulse, PW = 100 uS, DC = 10%, 85C Gate Current, RF (IG Drive) See charts page 5 - 7 mA Input Power (PIN), Pulse Width/Duty Cycle 100/10% 2000/20% us/% Pulse, 50 , V = 50 V, I = 300 mA, 32 dBm D DQ PW = 100 us, DC = 10%, 85C Operating Temp. Range T BASE Input Power (P ), IN (TBASE is backside of 40 +25 +85 C Pulse, 3:1 VSWR, VD = 50 V , IDQ = 300 mA, 29 dBm QPA1027) PW = 100 us, DC = 10%, 85C Electrical specifications are measured at specified test Channel Temperature (T ) 275 C CH conditions. Specifications are not guaranteed over all Mounting Temperature (30 seconds) 260 C recommended operating conditions. Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given Gate Current Maximum vs. T vs. Stage CH 120 above may cause permanent damage. These are stress ratings Total 110 only, and functional operation of the device at these conditions Stage 2 is not implied. 100 Stage 1 90 80 70 60 50 40 30 20 10 0 125 135 145 155 165 175 185 195 205 215 225 0 Channel Temperature ( C) Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 2.8 3.5 GHz Output Power at Saturation, P P = +26 dBm 48 dBm SAT IN Power Added Efficiency, PAE P = +26 dBm 55 % IN Small Signal Gain, S21 31 dB Input Return Loss, IRL 15 dB Output Return Loss, ORL 7 dB P Temperature Coefficient T = 40C to +85C P = +26 dBm 0.002 dBm/C SAT DIFF IN S21 Temperature Coefficient T = 40C to +85C 0.04 dB/C DIFF Notes: 1. Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, VG = -2.7V +/- typical, PW = 100 us, DC = 10% TBASE=+25C, Z0=50 2. T is back side of QPA1027 BASE Data Sheet Rev. B, May 2021 2 of 23 www.qorvo.com I Maximum (mA) G

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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