QPA1027 2.8 3.5 GHz 60 W GaN Power Amplifier Product Overview Qorvos QPA1027 is a packaged high-power, S-band amplifier fabricated on Qorvos production 0.25 um GaN on SiC High Voltage process (QGaN25HV). Covering 2.83.5 GHz, the QPA1027 provides 60 W of saturated output power and 22 dB of large-signal gain while achieving 55% power-added efficiency. The QPA1027 is packaged in a plastic overmold QFN with a Cu paddle offering easy handling with good thermal properties. As a result, the QPA1027 has bias flexibility allowing the user to vary the voltage to achieve optimum Key Features system performance while maintaining high reliability. Frequency Range: 2.8 3.5 GHz The QPA1027 is matched to 50 ohms with integrated DC PSAT (PIN=26 dBm): 48 dBm blocking caps on both I/O ports. With the high performance, PAE (P =26 dBm): 55 % IN good thermal characteristics and ease of handling and Small Signal Gain: > 31 dB system integration, the QPA1027 is ideal for radar and Bias: Pulsed V = 50 V, I = 300 mA, V = 2.7 V typ. D DQ G satellite communication systems. Package Dimensions: 6.0 x 6.0 x 0.85 mm Lead-free and RoHS compliant. Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications S-Band Radar V V V D1 G D2 Satellite Communication RF RF IN OUT Ordering Information Part No. Description QPA1027 S-Band 60 W GaN Power Amplifier QPA1027S2 Samples (2 pcs. pack) QPA1027TR7 250 pieces on a 7 reel (standard) QPA1027EVB01 Evaluation Board for QPA1027 V G Data Sheet Rev. B, May 2021 1 of 23 www.qorvo.com QPA1027 2.8 3.5 GHz 60 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Range Parameter Min Typ Max Units Drain Voltage (V ) +55 V Pulse (not recommended CW) D Drain Voltage (V ), Pulsed 50 50 V D Gate Voltage Range (V ) 6 to 0 V G Drain Current, Quiescent (I ) 300 mA DQ Drain Current, average (ID1, ID2) 0.192 A, 2.3 A Drain Current, RF (I ) See charts page 3 - 7 mA D Drive Gate Current (IG) See chart Gate Voltage Typ. Range (VG) 2 to -3.4 V Power Dissipation (PDISS), 80 W Pulse, PW = 100 uS, DC = 10%, 85C Gate Current, RF (IG Drive) See charts page 5 - 7 mA Input Power (PIN), Pulse Width/Duty Cycle 100/10% 2000/20% us/% Pulse, 50 , V = 50 V, I = 300 mA, 32 dBm D DQ PW = 100 us, DC = 10%, 85C Operating Temp. Range T BASE Input Power (P ), IN (TBASE is backside of 40 +25 +85 C Pulse, 3:1 VSWR, VD = 50 V , IDQ = 300 mA, 29 dBm QPA1027) PW = 100 us, DC = 10%, 85C Electrical specifications are measured at specified test Channel Temperature (T ) 275 C CH conditions. Specifications are not guaranteed over all Mounting Temperature (30 seconds) 260 C recommended operating conditions. Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given Gate Current Maximum vs. T vs. Stage CH 120 above may cause permanent damage. These are stress ratings Total 110 only, and functional operation of the device at these conditions Stage 2 is not implied. 100 Stage 1 90 80 70 60 50 40 30 20 10 0 125 135 145 155 165 175 185 195 205 215 225 0 Channel Temperature ( C) Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 2.8 3.5 GHz Output Power at Saturation, P P = +26 dBm 48 dBm SAT IN Power Added Efficiency, PAE P = +26 dBm 55 % IN Small Signal Gain, S21 31 dB Input Return Loss, IRL 15 dB Output Return Loss, ORL 7 dB P Temperature Coefficient T = 40C to +85C P = +26 dBm 0.002 dBm/C SAT DIFF IN S21 Temperature Coefficient T = 40C to +85C 0.04 dB/C DIFF Notes: 1. Test conditions unless otherwise noted: Pulsed VD = 50 V, IDQ = 300 mA, VG = -2.7V +/- typical, PW = 100 us, DC = 10% TBASE=+25C, Z0=50 2. T is back side of QPA1027 BASE Data Sheet Rev. B, May 2021 2 of 23 www.qorvo.com I Maximum (mA) G