QPA2225D 2838 GHz 0.4 Watt GaN Driver Amplifier Product Overview Qorvos QPA2225D is a wide band MMIC driver amplifier fabricated on Qorvos production 0.15 um GaN on SiC process (QGaN15). Covering 2838 GHz, the QPA2225D provides > 0.4 W of saturated output power with >23 dB of small-signal gain. The QPA2225D MMIC dimensions are 1.65 x 0.67 x 0.05 mm. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. Key Features The QPA2225D has DC blocking capacitors on both RF Frequency Range: 28 38 GHz ports, which are matched to 50 ohms. PSAT (PIN = 13 dBm): > 26 dBm Small Signal Gain: > 23 dB The QPA2225D is ideal for supporting communications and radar applications in both commercial and military IM3 (POUT/Tone = 20 dBm): -20 dBc markets. Bias: CW, V = +20 V, I = 64 mA, V = -2.5 V typ. D DQ G Die Dimensions: 1.65 x 0.67 x 0.05 mm Lead-free and RoHS compliant. Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Communications Radar Satellite Communications Electronic Warfare Ordering Information Part No. Description 2838 GHz 0.4 Watt GaN Amplifier QPA2225D (100 pcs.) QPA2225DS2 Samples (2 pcs. pack) QPA2225DEVBA Evaluation Board for QPA2225D Data Sheet Rev. B, May 2021 Subject to change without notice 1 of 23 www.qorvo.com QPA2225D 28 38 GHz 0.4 Watt GaN Driver Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Min Typ. Max Units Parameter Value/Range Drain Voltage (V ) 29.5 V Drain Voltage (V ) +20 V D D Gate Voltage Range (VG) -6 V to 0 V Drain Current, (I ) 64 mA DQ Drain Current (I ) 456 mA D Drain Current, RF (ID Drive) See chart page 6 mA Gate Current (IG) See plot page 18 Gate Voltage Range (VG) 2 to -2.9 V Power Dissipation (P ), 85 C 5 W DISS Gate Current, RF (IG Drive) See chart page 6 mA Input Power (PIN), CW, 50 , 18 dBm TBASE Range 40 +85 C V = 20 V, I = 64 mA, T = 85 C D DQ BASE Electrical specifications are measured at specified test Input Power (PIN), CW, 3:1 VSWR, conditions. Specifications are not guaranteed over all 18 dBm V = 20 V, I = 64 mA, T = 85 C recommended operating conditions. D DQ BASE Mounting Temperature (30 seconds) 320 C Storage Temperature -55 to +150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications (1) (2) Parameter Conditions Min Typ. Max Units Operational Frequency Range 28 38 GHz Output Power at Saturation, P P = +13 dBm > 26 dBm SAT IN Large Signal Gain PIN = +13 dBm > 13 dB Small Signal Gain, S21 > 23 dB Input Return Loss, IRL 5 dB Output Return Loss, ORL 5 dB POUT/Tone = 20 dBm Freq. = 35 GHz RD 3 Intermodulation Products, IM3 -20 dBc f = 100 MHz P /Tone = 20 dBm Freq. = 35 GHz OUT TH 5 Intermodulation Products, IM5 -30 dBc f = 100 MHz P Temperature Coefficient T = 40 C to +85 C P = +13 dBm -0.02 dBm/C SAT DIFF IN S21 Temperature Coefficient T = 40 C to +85 C -0.07 dB/C DIFF Notes: 1. Test conditions unless otherwise noted: CW, V = + 20 V, I = 64 mA, V = -2.5V +/- typical, T =+25 C, Z =50 D DQ G BASE 0 2. T is back side of 20 mil CuMo carrier plate with AuSn solder BASE Data Sheet Rev. B, May 2021 Subject to change without notice 2 of 23 www.qorvo.com
