X-On Electronics has gained recognition as a prominent supplier of QPA2263ATR7 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. QPA2263ATR7 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

QPA2263ATR7 Qorvo

QPA2263ATR7 electronic component of Qorvo
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Part No.QPA2263ATR7
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier DC-5GHz NF 3.8dB Gain 12.9dB
Datasheet: QPA2263ATR7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.3808 ea
Line Total: USD 4.38 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 4.3808
25 : USD 1.2715
100 : USD 1.0364
250 : USD 0.8441
500 : USD 0.6945
1000 : USD 0.5877

   
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We are delighted to provide the QPA2263ATR7 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPA2263ATR7 and other electronic components in the RF Amplifier category and beyond.

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QPA2263A DC5000MHz Cascadable SiGe HBT Amplifier Product Overview The QPA2263A is a high performance SiGe HBT MMIC amplifier. A Darlington configuration provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of 6 Lead SOT-363 Package intermodulation products. The QPA2263A may be operated from a variety of supply Key Features voltages by using a voltage dropping resistor. Two DC- DC to 5000 MHz Operation blocking capacitors, bypass capacitors and an optional RF choke complete the circuit required for operation of this Single Positive Voltage Supply internally matched 50 ohm device. Gain: 12.9dB at 1950MHz Output IP3: +21.7dBm typical at 1950MHz The QPA2263A is assembled in an industry standard Noise Figure: 3.8dB Typical at 1950MHz SOT-363 package that is lead-free and RoHS-compliant. Robust 1000V Class 1C HBM ESD Rating Lead-free/RoHS-compliant SOT-363 Package Functional Block Diagram Applications Cellular, PCS, GSM, UMTS PA Driver Amplifier IF/RF Buffer Amplifier Wireless Data, Satellite Top View Ordering Information Part No. Description QPA2263ASQ 25 Piece Sample Bag QPA2263ASR 100 Pieces on 7 Reel QPA2263ATR7 3000 pieces on a 7 reel QPA2263APCK401 850MHz, EVB with 5 Piece Sample Bag Data Sheet March 27, 2017 Subject to change without notice 1 of 7 www.qorvo.com QPA2263A DC5000MHz Cascadable SiGe HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temp 55 to +150C Operating Temperature 55 +105 C Device Voltage (VD) +4 V Junction Temperature (TJ) +125 C Device Current (I ) 40 mA Electrical specifications are measured at specified test conditions. D Specifications are not guaranteed over all recommended operating RF Input Power (Z = 50) +18dBm L conditions. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Bias Conditions should also satisfy the following expression: I x V < (T -T ) / R D D JUNCTION LEAD TH Electrical Specifications Parameter Conditions Min Typ Max Units 850MHz 14.1 Small Signal Gain 1950MHz 12.9 dB 2400MHz 12.5 850MHz +7.2 Output Power at 1dB Compression 1950MHz +7.5 dBm 2400MHz +7.2 850MHz +21.2 Output Third Intercept Point 1950MHz +21.7 dBm 2400MHz +21.2 850MHz 19.6 Input Return Loss, S11 1950MHz 14.2 dB 2400MHz 14.3 850MHz 18.6 Output Return Loss, S22 1950MHz 14.7 dB 2400MHz 15.4 850MHz 17.9 Reverse Isolation, S12 1950MHz 17.5 dB 2400MHz 17.3 850MHz 3.8 Noise Figure 1950MHz 3.8 dB 2400MHz 3.9 Device Operating Voltage +1.9 +2.2 +2.5 V Device Operating Current 20 mA Thermal Resistance 138 C/W Notes: 1. Test conditions unless otherwise noted: V = +5 V, R = 140, I = 20 mA Typ., OIP3 Tone Spacing = 1MHz, P per tone = 10dBm, S BIAS D OUT T = +25C, Z = Z =50 LEAD S L Data Sheet March 27, 2017 Subject to change without notice 2 of 7 www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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