QPA1013D 618 GHz 10 W GaN Power Amplifier General Description Qorvos QPA1013D is a broadband high power MMIC amplifier fabricated on Qorvos production 0.15 um GaN on SiC process (QGAN15). The QPA1013D operates from 618 GHz and provides more than 10 W saturated output power with power-added efficiency >20% and large-signal gain >20 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1013D is matched to 50 with integredat DC Product Features blocking capacitors on both RF I/O ports simplifying system integration. The broadband performance makes it Frequency Range: 618 GHz ideally suited in support of test instrumentation and POUT: > 40 dBm (PIN = 20 dBm) electronic warfare, as well as, supporting multiple radar PAE: > 20% (PIN = 20 dBm) and communication bands. Large Signal Gain: > 20 dB (PIN = 20 dBm) Small Signal Gain: > 25 dB The QPA1013D is 100% DC and RF tested on-wafer to Return Loss: > 6.5 dB ensure compliance to electrical specifications. Bias: VD = 20 V, IDQ = 1250 mA Chip Dimensions: 5.05 x 3.55 x 0.10 mm Lead-free and RoHS compliant. Applications Test Instrumentation Electronic Warfare (EW) Radar Communications Functional Block Diagram 2 3 4 5 6 1 7 12 11 10 9 8 Ordering Information Part Description QPA1013D 618 GHz 10 W GaN Power Amplifier QPA1013DEVBP01 Evaluation Board Data Sheet Rev C, September 2019 Subject to change without notice 1 of 15 www.qorvo.com QPA1013D 618 GHz 10 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 20 V Gate Voltage Range (VG) 8 to 0 V Drain Current (IDQ) 1250 mA (Total) Drain Current (ID1) 480 mA Gate Voltage Range (VG) 2.8 to 2.0 V Drain Current (ID2) 720 mA Electrical specifications are measured at specified test Drain Current (I ) 2880 mA D3 conditions. Specifications are not guaranteed over all operating conditions. Gate Currents (I /I /I See plot on page 3 G1 G2 G3) Power Dissipation (P ), 85 C, CW DISS 75 W Input Power (P ), 50 , VD = 20 V, IN 28 dBm IDQ = 1250 mA, 85 C, CW Input Power (P ), V 3:1, VD = 20 V, IN SWR 28 dBm IDQ = 1250 mA, 85 C, CW Mounting Temperature (30 seconds) 320 C Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C , VD = 20 V, IDQ = 1250 mA Parameter Min Typical Max Units Operational Frequency Range 6 18 GHz Small Signal Gain >25 dB Input Return Loss >6.5 dB Output Return Loss >7 dB Power Gain (PIN = 20 dBm) >20 dB Output Power (PIN = 20 dBm) >40 dBm Power Added Efficiency (PIN = 20 dBm) 22 % Gate Leakage (V = 10 V, V = 6.0 V) 19.6 0.0001 mA D G Small Signal Gain Temperature Coefficient 0.061 dB/C Output Power Temperature Coefficient 0.017 dBm/C (Calculated from 25 C to 85 C) (Pin = 20 dBm) Data Sheet Rev C, September 2019 Subject to change without notice 2 of 15 www.qorvo.com