QPA2211D 27.531 GHz 14 Watt GaN Power Amplifier Product Overview Qorvo s QPA2211D is a Ka-band power amplifier fabricated on Qorvo s 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 5 W linear power with 25 dBc intermodulation distortion products and 26 dB small signal gain. Saturated output power is 14 W with power-added efficiency of 34%. QPA2211D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2211D is fully matched to 50 ohms with integrated DC blocking caps on Key Features both I/O ports. Frequency Range: 27.531 GHz The QPA2211D is 100% DC and RF tested on-wafer to P (P =24 dBm): > 41.5 dBm SAT IN ensure compliance to electrical specifications. PAE (P =24 dBm): > 34 % IN Lead-free and RoHS compliant. Power Gain (PIN=24 dBm): 17 dB IMD3 (at 34 dBm/tone): < 25 dBc Small Signal Gain: 26 dB Bias: V = 22 V, I = 280 mA D DQ Die Dimensions: 2.740 x 2.552 x 0.050 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications VG12 VG3 VD12 VD3 5G Infrastructure Satellite Communications RF IN RF OUT Ordering Information VG12 VG3 VD12 VD3 Part No. Description 27.531 GHz 14 Watt GaN Amplifier QPA2211D (10 Pcs.) QPA2211DEVB03 Evaluation Board for QPA2211D Data Sheet Rev. F, May 2021 Subject to change without notice 1 of 22 www.qorvo.com QPA2211D 27.5 31 GHz 14 Watt GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 22 V Gate Voltage Range (V ) 5 V to 0 V Drain Current (I ) 280 mA G DQ Drain Current (ID) 5600 mA Operating Temperature 40 to +85 C Gate Current (IG) See plot pg. 17 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Power Dissipation (P ), 85 C 40 W DISS recommended operating conditions. Input Power (P ), 50 , IN 36 dBm V =22 V, I =280 mA, 85 C D DQ Input Power (P ), 3:1 VSWR, IN 36 dBm VD=22 V, IDQ=280 mA, 85 C Soldering Temperature (30 s, max.) 320 C Storage Temperature 55 to +150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency 27.5 31 GHz 27.5 GHz 42.1 dBm Output Power (P =24 dBm) 29 GHz 41.7 dBm IN 31 GHz 40.8 dBm 27.5 GHz 42.5 % Power Added Efficiency (P =24 dBm) 29 GHz 37.7 % IN 31 GHz 34.1 % 27.5 GHz 26 dB Small Signal Gain 29 GHz 28 dB 31 GHz 26 dB 27.5 GHz 35 dB Input Return Loss 29 GHz 15 dB 31 GHz 12 dB 27.5 GHz 3 dB Output Return Loss 29 GHz 10 dB 31 GHz 19 dB 27 GHz 29 dBc IMD3 (POUT/Tone=34 dBm, 10 MHz tone 29 GHz 33 dBc spacing) 31 GHz 33 dBc POUT Temp. Coeff. (85C to25 C, PIN = 24 dBm)) 0.027 dB/C Sm. Sig. Gain Temp. Coefficient (85 C to40 C) 0.099 dB/C Test conditions, unless otherwise noted: T = +25 C, V = 22 V, I = 280 mA D DQ Data Sheet Rev. F, May 2021 Subject to change without notice 2 of 22 www.qorvo.com