QPA9421 High Linearity 0.5 W Small Cell PA Product Overview The QPA9421 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature control circuits, suitable for small cell base station applications. The QPA9421 provides 30dB gain and +27dBm linear 7mmx7mm Leadless SMT Package power over the 2.112.17GHz frequency range. This amplifier is able to achieve 50dBc ACLR at +27dBm output power using 20 MHz LTE signal. The QPA9421 integrates two high performance amplifier stages onto a module to allow for a compact system design Key Features and requires very few external components for operation. 2.112.17GHz Frequency Range The amplifier is bias adjustable allowing the amplifiers Fully integrated, 2 Stage Power Amplifier power consumption to be optimized. The QPA9421 is Internally Matched 50 Input/Output available in a 7x7mm surface mount package. 50dBc ACLR at Pavg = +27dBm 30dB Gain 14% PAE at +27dBm 420mA Quiescent Current On-chip Control Bias and Temp. Comp Circuit Functional Block Diagram Applications Small Cell/Picocell Vref GND 1 14 Enterprise Femtocell Customer Premises Equipment (CPE) GND GND 2 13 Data Cards and Terminals GND RF out Distributed Antenna Systems (DAS) 3 12 Booster Amps, Repeaters VCC1 VCC2 Biasing Circuit 4 11 RF in GND 10 5 GND GND 6 9 Backside Paddle RF/DC GND NC GND Ordering Information 7 8 Part No. Description Top View QPA9421TR13 2500 pieces on a 13 reel QPA9421EVB-01 2.11 2.17 GHz Evaluation board Datasheet, May 29, 2019 Subject to change without notice 1 of 10 www.qorvo.com QPA9421 High Linearity 0.5 W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150C VCC1, Vcc2 +3.6 +4.5 +5.25 V V +2.75 +2.85 +2.95 V Supply Voltage (VCC) +6 V ref V +3.5 V TCASE 40 +85 C ref Tj at T max +165 C RF Input Power, CW, 50, T=25 C +13 dBm CASE Electrical specifications are measured at specified test conditions. Tj at T = 125C +205C CASE Specifications are not guaranteed over all recommended operating Operation of this device outside the parameter ranges given conditions. above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: V = V = +4.5V, Vref = +2.85V, Temp= +25C CC1 CC2 Parameter Conditions Min Typ Max Units Operational Frequency Range 2110 2170 MHz Test Frequency 2140 MHz Gain 27 29.6 33 dB Input Return Loss CW, Small Signal 15 21 dB Output Return Loss 15 25 dB P1dB CW +35.5 dBm P +27dBm,20MHzLTEE-TM1.1,9.5dB PAR 50 -47 dBc OUT P +27 dBm, 20MHz x 2 LTE E-TM1.1, 9.5dB PAR 46 dBc OUT ACLR POUT +27 dBm, 15MHz LTE E-TM1.1, 9.5dB PAR 50 dBc POUT +27 dBm, 10MHz LTE E-TM1.1, 9.5dB PAR 49 dBc POUT +27 dBm, 5MHz LTE E-TM1.1, 9.5dB PAR 49 dBc Power Added Efficiency POUT+27dBm,20MHzLTEE-TM1.1,9.5dB PAR 13 14 % 1 Quiescent Current, ICQ VCC1 + VCC2 330 420 510 mA Leakage Current on VCC VCC +4.5V, Vref 0V 3 10 A Reference Current , I Temp -40C to +85C, V = +2.85V 13 19.5 mA ref ref Operational Current, I P +27dBm, 20MHzLTEE-TM1.1,9.5dB PAR 680 920 mA CC OUT Wake Up Time 50% of control signal to 90% of the RF output 715 ns Power Down Time 50% of control signal to 10% of the RF output 1370 ns Spurious Output Level P +27dBm, In & Out of band load VSWR 10:1 60 dBc OUT VSWR survivability No permanent degradation or failure 10:1 - 2F0 (POUT +27 dBm), CW signal 39 -33 dBc Harmonics 3F0 (POUT +27 dBm), CW signal 48 -37 dBc 4F0 (POUT +27 dBm), CW signal 64 -37 dBc Thermal Resistance, jc Module (junction to case) 18.5 C/W Notes: 1. Vcc1 draws very little current and provides the bias voltage to the current mirror circuit along with Vref to set the bias point for the whole amplifier. 2. Control signal applied to Vref Pin, 0 to 2.85V Datasheet, May 29, 2019 Subject to change without notice 2 of 10 www.qorvo.com