QPA9501TR13 Qorvo

QPA9501 3-Stage LTE-U/LAA Power Amplifier General Description The QPA9501 is high power amplifier module containing an internally matched 3-stage PA, compensated DC biasing circuit and output power detector. This PA module is optimized for the WiFi bands from 5.1-5.9GHz and hence well suited for LTE-U/LAA applications. It provides high gain (32dB) and -47dBc ACLR at Pout of 22dBm with a 20MHz LTE signal without any DPD. 4x4mm 20-pin Leadless QFN Package The QPA9501 features chipset logic compatible control Product Features voltages and buffered PA enable pin (PAEN) all of which draw very low current to facilitate ease of use and 4.9 GHz to 5.9 GHz Operational Bandwidth compatibility with current and future transceiver Fully Integrated Power Amplifier Module With Power generations. With its optimized power dissipation, this Detector amplifier module is well suited for implementation into next generation MIMO configurations and well designed to work Internally Matched Input/Output with or without digital pre-distortion (DPD). -47dBc ACLR with Pout = 22dBm avg Temperature Compensated Bias Network The QPA9501 is assembled in a small footprint 4.0 x 4.0 x High Gain=32dB 0.85 mm 20-pin QFN package. Integrated CMOS Compatible Logic and Shutdown Supply Voltage: +3.3 V to +5.0 V Leadless 4.0x4.0x0.85 mm Pb-Free QFN Package Applications Functional Block Diagram 5G, Pre-5G Small Cell BTS Pin 1 Reference Mark LTE-U/LAA WiFi Access Points and Small Cells 20 19 18 17 16 Telematics 1 15 GND NC DC Biasing/ Point-to-point and Backhaul Control Circuit 2 14 GND GND ISM Band 13 RFOUT RFIN 3 4 GND 12 GND 5 PA EN 11 GND 10 6 7 8 9 Backside Paddle RF/DC GND Ordering Information Top View Part No. Description QPA9501TR13 2,500 pieces on a 13 reel (standard) QPA9501PCB401 Evaluation Board Datasheet, Rev. J, June 26, 2020 Subject to change without notice - 1 of 10 - www.qorvo.com Vcc1 NC Vcc2 DET ALT Vcc3 NC GND Vcc3 GND DETQPA9501 3-Stage LTE-U/LAA Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 40 to 150C V , V , V +3.15 +5 +5.5 V CC1 CC2 CC3 RF Input Power, CW, 50 , T = 25 C +5 dBm TAMB 40 25 +105 C 6 Device Voltage +6.0 V Tj (for>10 hours MTTF) 170 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Freq. Range 4900 5900 MHz 4900 MHz 33.6 dB Small Signal Gain 5200 MHz 30 34 36 dB 5800 MHz 29.5 32 36 dB Input Return Loss 5800 MHz 10 dB Output Return Loss 8 dB 4900 MHz 6.0 % (2) Power Added Efficiency 5200 MHz 5.5 6.2 % 5800 MHz 5.5 6.5 % 4900 MHz -46 dBc (2) ACLR 5200 MHz -47 -45 dBc 5800 MHz -48 -45 dBc 4900 MHz +31.1 dBm P1dB 5200 MHz +29.5 +31.8 dBm 5800 MHz +29.5 +33 dBm Noise Figure 7 dB (3) Rise/Fall Time 0.4 0.8 us Input Voltage for High State +1.8 +3.0 VCC1 PA Enable Voltage V Input Voltage for Low State 0 +0.45 PA Enable Current 100 A Icq Total current with no RF 250 350 450 mA Icc Operating current with Pout = 22dBm 450 520 650 mA TX Shut Down Current PA EN= Low, No RF 8 A No RF +0.25 +0.35 +0.40 Detector Voltage V Pout = +22dBm +0.68 Pout = +28 dBm, All non-harmonically related Stability - outputs < 50 dBc/100 kHz VSWR = 6:1, all phases Thermal Resistance, jc Junction to backside paddle 17 C/W Notes: 1. Test conditions unless otherwise noted: V V =V =+5.0 V, PA Enable High = 3.0 V. Temp.=+25C CC1= CC2 CC3 2. Pout = 22dBm average, 20MHz LTE, PAR 9.5dB 3. Maximum specification listed is guaranteed be design. Not tested in production. Datasheet, Rev. J, June 26, 2020 Subject to change without notice - 2 of 10 - www.qorvo.com