X-On Electronics has gained recognition as a prominent supplier of QPA9903TR13 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. QPA9903TR13 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

QPA9903TR13 Qorvo

QPA9903TR13 electronic component of Qorvo
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Part No.QPA9903TR13
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier Band 3 0.5W PA
Datasheet: QPA9903TR13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 24.245
25 : USD 16.925
100 : USD 13.7375
250 : USD 11.175
500 : USD 9.2625
1000 : USD 7.9125
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We are delighted to provide the QPA9903TR13 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPA9903TR13 and other electronic components in the RF Amplifier category and beyond.

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QPA9903 1805-1880MHz 4 W High-Efficiency Amplifier Product Overview The QPA9903 is a high-efficiency, linearizable power amplifier targeting Band 3 small-cell wireless infrastructure systems. Using InGaP/GaAs HBT technology, the product delivers high efficiency of 33.8% at +28dBm average output power while providing excellent DPD linearized ACPR of -50dBc for signal bandwidths of up to 60MHz. 16 Pad 5x5mm Package The QPA9903 is housed in a 5x5mm SMT package. It is pin-to-pin compatible to QPA9908 (band 8 high-efficiency Key Features small cell PA). 18051880MHz 32dB Gain typical across the band Over 36 dBm P3dB 33.8% PAE at +28 dBm power output <-50 dBc ACPR DPD linearized at +28 dBm power output with 1-carrier signal 1.8V logic compatible PA ON/OFF control On chip ESD protection Applications Functional Block Diagram 3GPP Band 3 Small Cells M-MIMO Repeaters / DAS Mobile Infrastructure General Purpose Wireless Ordering Information Part No. Description QPA9903TR13 2500 on reel QPA9903EVB-01 1805-1880 MHz EVB Top View th Datasheet, Aug. 10 , 2021 Subject to change without notice 1 of 14 www.qorvo.com QPA9903 1805-1880MHz 4 W High-Efficiency Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +125C Device Voltage (VCC) +4.75 +5 +5.25 V (1) RF Input Power, Pulsed CW, 50 +10 dBm TCASE 40 +85 C 6 Device Voltage (VCC) +5.5 V Tj for >10 hours MTTF +175 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Note: 1. 1805-1880 MHz, Pulsed CW, 10% duty cycle, 100us period Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 1805 1880 MHz Test Frequency 1840 MHz Gain Pout=+28dBm 30 32 34.2 dB Input Return Loss -17.5 dB Output P3dB 10 s pulse width, 10% duty cycle 33.5 36 dBm (2) Power Added Efficiency Pout=+28dBm 29 33.8 % (2) ACPR(Uncorrected) Pout=+28dBm -34 -30 dBc (2) ACPR with DPD Pout=+28dBm -50 dBc (3) ACPR(Uncorrected) Pout=+28dBm -31 dBc (3) ACPR with DPD Pout=+28dBm -45 dBc Quiescent Current, I Pins 12, 14 and 16 92 mA CQ Total Operating Current Pins 5, 12, 14 and 16, Pout=+28dBm 360 mA Thermal Resistance, Junction to case 27.4 C/W jc VEN High 1.17 1.8 VCC V VEN Low 0 0 0.5 V 2nd Harmonic Pout=+28dBm -30 dBc 3rd Harmonic Pout=+28dBm -45 dBc Notes: 1. Test conditions unless otherwise noted: All V & V =+5.0V, V = +1.8V, Temp=+25C, 50 system. CC BIAS EN 2. LTE, 20 MHz E-UTRA Test Model 1.1 or 3.1, PAR = 8.5 dB at 0.01% Probability 3. LTE, 20 MHz x 3 E-UTRA Test Model 1.1 or 3.1, PAR = 8.5 dB at 0.01% Probability Power Amplifier Enable Logic Table Parameter High Low V Power Amplifier ON Power Amplifier OFF EN th Datasheet, Aug. 10 , 2021 Subject to change without notice 2 of 14 www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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