IT2008 Renesas

iT2008 10 MHz 26.5 GHz High-Power Amplifier The iT2008 is a broadband GaAs MMIC traveling wave amplifier designed for high output Description power applications where low-frequency extension capabilities are also required. The iT2008 provides a saturated output power of 1 W up to 7 GHz, greater than 29 dBm up to 15 GHz and greater than 25 dBm at 26.5 GHz. Average gain of 10 dB with flatness of +/-1 dB is provided up to 26.5 GHz. DC power consumption is as low as 3.1 W. Input/output ports are DC coupled. Features V DD Frequency range: 2 GHz 26.5 GHz with low- frequency extension capability down to 10 MHz 30 dBm nominal Psat (2 GHz 7 GHz) 29 dBm nominal Psat (7 GHz 15 GHz) IN OUT >25 dBm nominal Psat at 26.5 GHz 10 dB nominal gain with +/-1 dB flatness 3.1 W DC power consumption Nominal DC bias conditions: 9 V at 350 mA V GG1 Full chip passivation for high reliability Absolute Symbol Parameters/conditions Min. Max. Units Ratings V Positive supply voltage 11 V DD V Negative supply voltage -2 0 V GG1 I Positive supply current 900 mA DD I Negative supply current 1.8 mA GG1 Pin RF input power 25 dBm Pdiss DC DC power dissipation (no RF) 5 W Tch Operating channel temperature 150 C Tm Mounting temperature (30 s) 320 C Tst Storage temperature -65 150 C Electrical Characteristics Symbol Parameters/conditions Min. Typ. Max. Units BW Frequency range* 2 26.5 GHz (at 25 C) 50-ohm S21 Small signal gain 8 10 dB system, V =+9 V, DD Gain flatness +/-1 dB Quiescent current (I )=350 mA DQ S11 Input return loss 10 15 dB S22 Output return loss 8 12 dB (*) Low frequency S12 Isolation 30 dB extension available. Psat Saturated output power (3 dB gain compression) 2 - 10 GHz 27.5 29.5 dBm 2 - 20 GHz 26.5 28.5 dBm 2 - 26.5 GHz 23 25 dBm P Output power (1 dB gain compression) 1dB 2 - 10 GHz 27 29 dBm 2 - 20 GHz 26 28 dBm 2 - 26.5 GHz 22.5 24.5 dBm For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, 1 e-mail: sales gigoptix.com, or visit our site at www.GigOptix.com.iT2008 10 MHz 26.5 GHz High-Power Amplifier o o Thermal Symbol Parameters/conditions Rth jb ( C/W) Tch ( C) MTFF (h) Rth jb Thermal resistance junction-back side of die Characteristics No RF: DC bias V = 9 V, I = 35 0mA , P = 3.1 W 9.2 98.5 >> +1E7 DD DQ DC Tbase = 70 C Rth jb Thermal resistance junction-back side of die RF applied: Saturated power 1 W, V = 9 V, Pdiss = 4.4 W 9.2 110.6 >> +1E7 DD Tbase = 70 C Chip Layout and Bond Pad Locations (Back of chip is RF and DC ground) P6 P5 P4 P1 P2 P3 Chip size tolerance: 20 m Chip thickness: 4 mil with a tolerance of 0.4 mil. Pinout and pad dimensions: 2 P1: RF input (100 x 150 m ) 2 P2: V , negative voltage (100 x 100 m ) GG1 2 P3: Gate low-frequency extension (250 x 100 m ) 2 P4: RF output and Vdd bias (option 2) by means of bias-tee (100 x 150 m ) 2 P5: Drain low-frequency extension (300 x 100 m ) 2 P6: V positive voltage (option 1) by means of choke (200 x 100 m ) DD Note: All dimensions are in millimeters For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937, 2 e-mail: sales gigoptix.com, or visit our site at www.GigOptix.com.