DocumentNumber:MMG15241H FreescaleSemiconductor Rev. 2, 9/2014 Technical Data EnhancementModepHEMT Technology(E--pHEMT) HighLinearity Amplifier MMG15241HT1 TheMMG15241H is ahighdynamic range,low noiseamplifierMMIC,housed inaSOT--89standardplasticpackage.Itisidealforcellular,PCS,LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 500to2800MHz frequency range. WithhighOIP3 andlow noisefigure, it can be utilized as a driver amplifier in the transmitchain andas asecond stageLNA 500--2800MHz,15.9dB in the receive chain. 24dBm Features E--pHEMTLNA/GPA Frequency: 500--2800 MHz Noise Figure: 1.6 dB 2140 MHz P1dB: 24dBm 2140MHz Small--Signal Gain: 15.9 dB 2140 MHz ThirdOrder Output Intercept Point: 39.4dBm 2140MHz Single 5 V Supply Supply Current: 85mA 50Ohm Operation(someexternal matchingrequired) SOT--89 Cost--effectiveSOT--89SurfaceMount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2.MaximumRatings 900 2140 2600 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V DD Noise Figure NF 1.2 1.6 1.3 dB Supply Current I 130 mA DD Input Return Loss IRL --11.8 --21.3 --16.9 dB RFInput Power P 23 dBm in (S11) Storage Temperature Range T --65to+150 C stg Output Return Loss ORL --13.4 --16.2 --20.9 dB (S22) Junction Temperature T 175 C J Small--SignalGain G 20.5 15.9 14.4 dB p (S21) PowerOutput 1dB P1db 24 24 24 dBm Compression Third OrderInput IIP3 18.2 23.5 26.2 dBm Intercept Point Third OrderOutput OIP3 38.7 39.4 40.6 dBm Intercept Point 1. V =5Vdc,T =25 C, 50ohm system, applicationcircuit DD A tuned forspecified frequency. Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 59 C/W JC Case Temperature 85C, 5 Vdc, 84 mA, no RFapplied 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =5Vdc,2140MHz,T =25 C, 50ohm system, inFreescaleApplicationCircuit) DD A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 14 15.9 dB p Input Return Loss (S11) IRL --21.3 dB Output Return Loss (S22) ORL --16.2 dB PowerOutput 1dB Compression P1dB 24 dBm Third OrderInput Intercept Point IIP3 23.5 dBm Third OrderOutput Intercept Point OIP3 39.4 dBm Reverse Isolation (S12) S12 --22.5 dB Noise Figure NF 1.6 dB Supply Current I 65 85 105 mA DD Supply Voltage V 5 V DD Table5.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram Table6.ESD ProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1A MachineModel(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C MMG15241HT1 RF DeviceData Freescale Semiconductor, Inc. 2