DocumentNumber:MMG3007NT1 FreescaleSemiconductor Rev. 7, 9/2014 Technical Data HeterojunctionBipolarTransistor (InGaPHBT) BroadbandHighLinearity Amplifier MMG3007NT1 The MMG3007NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS,BWA,WLL,PHS,CATV,VHF,UHF,UMTSandgeneralsmall-- signal RF. 0--6000MHz, 19dB Features 16dBm InGaPHBT GPA Frequency: 0 to 6000 MHz P1dB: 16dBm 900MHz Small--Signal Gain: 19 dB 900 MHz ThirdOrder Output Intercept Point: 30dBm 900MHz Single 5 V Supply Internally Matchedto50Ohms Cost--effectiveSOT--89SurfaceMount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. SOT--89 (1) Table1. Typical Performance Table2. MaximumRatings 900 2140 3500 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 7 V CC Small--SignalGain G 19 16.5 14 dB p Supply Current I 250 mA CC (S21) RFInput Power P 10 dBm in Input Return Loss IRL --14 --21 --21 dB (S11) Storage Temperature Range T --65to+150 C stg Junction Temperature T 175 C Output Return Loss ORL --20 --17 --25 dB J (S22) PowerOutput 1dB P1dB 16 15.5 16 dBm Compression Third OrderOutput OIP3 30 29 28.5 dBm Intercept Point 1. V =5Vdc,T =25 C, 50ohm system. CC A Table3. Thermal Characteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 77 C/W JC Case Temperature 86C, 5 Vdc, 47 mA, no RFapplied 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4. Electrical Characteristics (V =5Vdc,900MHz,T =25 C, 50ohm system, inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 18 19 dB p Input Return Loss (S11) IRL --14 dB Output Return Loss (S22) ORL --20 dB PowerOutput 1dB Compression P1dB 16 dBm Third OrderOutput Intercept Point OIP3 30 dBm Noise Figure NF 3.8 dB Supply Current I 39 47 55 mA CC Supply Voltage V 5 V CC Table5. Functional Pin Description 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1. Functional Diagram Table6. ESD Protection Characteristics TestMethodology Class Human Body Model(perJESD22--A114) 1A MachineModel(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table7. MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C MMG3007NT1 RF DeviceData Freescale Semiconductor, Inc. 2