X-On Electronics has gained recognition as a prominent supplier of MMG3007NT1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MMG3007NT1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MMG3007NT1 NXP

MMG3007NT1 electronic component of NXP
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Part No.MMG3007NT1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier 15DBM 20DBGAIN GPA SOT89
Datasheet: MMG3007NT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.1173
10 : USD 1.1057
50 : USD 1.0647
250 : USD 0.9945
500 : USD 0.9828
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.4532
10 : USD 2.2176
25 : USD 1.975
100 : USD 1.781
250 : USD 1.587
500 : USD 1.386
1000 : USD 1.0949
2000 : USD 1.0777
5000 : USD 1.0777
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Qualification
Packaging
Series
Test Frequency
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Supply Voltage - Max
Supply Voltage - Min
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMG3007NT1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMG3007NT1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:MMG3007NT1 FreescaleSemiconductor Rev. 7, 9/2014 Technical Data HeterojunctionBipolarTransistor (InGaPHBT) BroadbandHighLinearity Amplifier MMG3007NT1 The MMG3007NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS,BWA,WLL,PHS,CATV,VHF,UHF,UMTSandgeneralsmall-- signal RF. 0--6000MHz, 19dB Features 16dBm InGaPHBT GPA Frequency: 0 to 6000 MHz P1dB: 16dBm 900MHz Small--Signal Gain: 19 dB 900 MHz ThirdOrder Output Intercept Point: 30dBm 900MHz Single 5 V Supply Internally Matchedto50Ohms Cost--effectiveSOT--89SurfaceMount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. SOT--89 (1) Table1. Typical Performance Table2. MaximumRatings 900 2140 3500 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 7 V CC Small--SignalGain G 19 16.5 14 dB p Supply Current I 250 mA CC (S21) RFInput Power P 10 dBm in Input Return Loss IRL --14 --21 --21 dB (S11) Storage Temperature Range T --65to+150 C stg Junction Temperature T 175 C Output Return Loss ORL --20 --17 --25 dB J (S22) PowerOutput 1dB P1dB 16 15.5 16 dBm Compression Third OrderOutput OIP3 30 29 28.5 dBm Intercept Point 1. V =5Vdc,T =25 C, 50ohm system. CC A Table3. Thermal Characteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 77 C/W JC Case Temperature 86C, 5 Vdc, 47 mA, no RFapplied 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4. Electrical Characteristics (V =5Vdc,900MHz,T =25 C, 50ohm system, inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 18 19 dB p Input Return Loss (S11) IRL --14 dB Output Return Loss (S22) ORL --20 dB PowerOutput 1dB Compression P1dB 16 dBm Third OrderOutput Intercept Point OIP3 30 dBm Noise Figure NF 3.8 dB Supply Current I 39 47 55 mA CC Supply Voltage V 5 V CC Table5. Functional Pin Description 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1. Functional Diagram Table6. ESD Protection Characteristics TestMethodology Class Human Body Model(perJESD22--A114) 1A MachineModel(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table7. MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C MMG3007NT1 RF DeviceData Freescale Semiconductor, Inc. 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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