X-On Electronics has gained recognition as a prominent supplier of MMG30271BT1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MMG30271BT1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MMG30271BT1 NXP

MMG30271BT1 electronic component of NXP
MMG30271BT1 NXP
MMG30271BT1 RF Amplifier
MMG30271BT1  Semiconductors

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See Product Specifications
Part No. MMG30271BT1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier BTS Driver Amplifier, 900-4300 MHz, 17.5 dB, 26.9 dBm
Datasheet: MMG30271BT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.4587 ea
Line Total: USD 4.46 
Availability - 1625
Ship by Wed. 16 Apr to Fri. 18 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Fri. 25 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 11.8002
10 : USD 7.8898
30 : USD 7.1481
100 : USD 6.5288

1625
Ship by Wed. 16 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 4.4587
10 : USD 3.4574
25 : USD 3.264
100 : USD 3.2185
250 : USD 3.0593
500 : USD 2.7864
1000 : USD 2.6499
2000 : USD 2.4452

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
OIP3 - Third Order Intercept
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMG30271BT1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMG30271BT1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:MMG30271B FreescaleSemiconductor Rev. 0, 3/2016 TechnicalData DriverorPre--driver MMG30271BT1 GeneralPurposeAmplifier TheMMG30271Bisa1/2W,ClassAB,highgainamplifierdesignedasadriver orpre--driverforcellular basestationDoherty amplifiers and generalpurpose 9004300MHz,17.5dB 2140MHz smallsignalapplications.Itsversatiledesignenablesoperationfrom 26.9dBm 9004300MHz, coveringthe3G and4G cellular bands. BTSDRIVERAMPLIFIER Features P1dB: 26.9dBm 2140MHz Gain: 17.5dB 2140MHz Suitablefor Doherty Amplifiers andBTS Transmitters 5V SingleSupply, 134mA Quiescent Current SOT--89Package SOT--89 50Ohm OperationwithMinimalExternalMatching (1) Table1.LoadPullPerformance Characteristic Symbol 900MHz 1900MHz 2140MHz 2600MHz 3500MHz 4200MHz Unit Maximum AvailableGain MAG 24.9 18.9 17.7 15.7 13.1 12.1 dB (2) (2) P 1dB Compression P1dB 29.0 27.3 27.2 27.3 27.4 27.1 dBm out Table2.MaximumRatings Rating Symbol Value Unit Supply Voltage V 6 V CC Supply Current I 240 mA CC RFInputPower P 23 dBm in StorageTemperatureRange T 65to+150 C stg JunctionTemperature T 175 C J Table3.ThermalCharacteristics (3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 33 C/W JC CaseTemperature65C,5Vdc,138mA,noRFapplied 1. V =5Vdc,T =25 C,CW. CC A 2. Maximum allowablecurrentnottoexceed240mA. 3. RefertoAN1955,Thermal Measurement Methodology of RF Power Amplifiers. GotoTable4.ElectricalCharacteristics (V =5Vdc,2140MHz,T =25 C,50ohmsystem,inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain(S21) G 16.8 17.5 dB p PowerOutput 1dB Compression P1dB 26.9 dBm InputReturnLoss (S11) IRL 9.2 dB OutputReturnLoss (S22) ORL 11.4 dB Supply Current I 107.5 134 142.5 mA CC Supply Voltage V 5 V CC Table5.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DCSupply out 1 2 3 Figure1.FunctionalDiagram Table6.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 1 260 C Table8.OrderingInformation Device TapeandReelInformation Package MMG30271BT1 T1Suffix =1,000Units,12mm TapeWidth,7--inchReel SOT--89 MMG30271BT1 RF DeviceData FreescaleSemiconductor, Inc. 2

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
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