DocumentNumber:MMG3H21NT1 FreescaleSemiconductor Rev. 3, 9/2014 TechnicalData HeterojunctionBipolarTransistor Technology(InGaPHBT) MMG3H21NT1 BroadbandHighLinearity Amplifier The MMG3H21NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as 0--6000MHz, 19.3dB cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTSandgeneral 20.5dBm small--signalRF. InGaPHBTGPA Features Frequency: 0--6000MHz P1dB: 20.5dBm 900MHz Small--SignalGain: 19.3dB 900MHz ThirdOrder Output Intercept Point: 37dBm 900MHz Single5V Supply ActiveBias Internally Matchedto50Ohms SOT--89 Cost--effectiveSOT--89SurfaceMount Plastic Package InTapeandReel. T1Suffix = 1,000Units, 12mm TapeWidth, 7--inchReel. (1) Table1.TypicalPerformance Table2. MaximumRatings 900 2140 3500 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 7 V CC Small--SignalGain G 19.3 16 14 dB p Supply Current I 300 mA CC (S21) RFInputPower P 12 dBm in InputReturnLoss IRL --18 --25 --20 dB StorageTemperatureRange T --65to+150 C (S11) stg JunctionTemperature T 175 C OutputReturnLoss ORL --10 --6 --8 dB J (S22) PowerOutput 1dB P1dB 20.5 19.8 17.7 dBm Compression ThirdOrderOutput OIP3 37 34 31 dBm InterceptPoint 1. V =5Vdc,T =25 C,50ohmsystem,inFreescale CC A applicationcircuit. Table3. Thermal Characteristics (2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 38.6 C/W JC CaseTemperature84C,5Vdc,90mA,noRFapplied 2. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. GotoTable4. Electrical Characteristics (V =5Vdc,900MHz,T =25 C,50ohmsystem,inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain(S21) G 18.3 19.3 dB p InputReturnLoss (S11) IRL --18 dB OutputReturnLoss (S22) ORL --10 dB PowerOutput 1dBCompression P1dB 20.5 dBm ThirdOrderOutputInterceptPoint OIP3 37 dBm NoiseFigure NF 5.5 dB Supply Current I 75 90 110 mA CC Supply Voltage V 5 V CC Table5.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DCSupply out 1 2 3 Figure1.FunctionalDiagram Table6. ESD Protection Characteristics TestConditions/TestMethodology Class HumanBody Model(perJESD22--A114) 1C MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table7. MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 1 260 C MMG3H21NT1 RFDeviceData FreescaleSemiconductor, Inc. 2