DocumentNumber:MMG3005NT1 FreescaleSemiconductor Rev. 9, 10/2014 TechnicalData HeterojunctionBipolarTransistor Technology(InGaPHBT) BroadbandHighLinearity Amplifier MMG3005NT1 TheMMG3005NT1isageneralpurposeamplifierthatisinternally prematchedanddesignedforabroadrangeofClassA,small--signal,high linearity, general purpose applications. It is suitable for applications with frequenciesfrom800to2200MHzsuchascellular,PCS,WLL,PHS, VHF, UHF, UMTS andgeneralsmall--signalRF. 800--2200MHz,15dB Features 30dBm Frequency: 800--2200MHz InGaPHBTGPA P1dB: 30dBm 2140MHz Small--SignalGain: 15dB 2140MHz ThirdOrder Output Intercept Point: 47dBm 2140MHz Single5V Supply Internally Prematchedto50Ohms InTapeandReel. T1Suffix = 1,000Units, 16mm TapeWidth, 13--inchReel. PQFN5 5 (1) Table1.TypicalPerformance Table2.MaximumRatings 900 1960 2140 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V DC Small--SignalGain G 18.5 15.5 15 dB p Supply Current I 600 mA DC (S21) RFInputPower P 18 dBm in InputReturnLoss IRL --14 --10 --11 dB StorageTemperatureRange T --65to+150 C (S11) stg JunctionTemperature T 150 C OutputReturnLoss ORL --12 --7 --7 dB J (S22) PowerOutput 1dB P1db 30 30 30 dBm Compression ThirdOrderOutput OIP3 47 47 47 dBm InterceptPoint 1. V =5Vdc,T =25 C,50ohmsystem,applicationcircuit DC A tunedforspecifiedfrequency. Table3.ThermalCharacteristics (2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 21.5 C/W JC CaseTemperature100C,5Vdc,480mA,noRFapplied 2. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. GotoTable4.ElectricalCharacteristics (V =5Vdc,2140MHz,T =25 C,50ohmsystem,inFreescaleApplicationCircuit) DC A Characteristic Symbol Min Typ Max Unit Small--SignalGain(S21) G 14 15 dB p InputReturnLoss (S11) IRL --11 dB OutputReturnLoss (S22) ORL --7 dB PowerOutput 1dB Compression P1dB 30 dBm ThirdOrderOutputInterceptPoint OIP3 47 dBm NoiseFigure NF 5 dB Supply Current I 420 480 520 mA DC Supply Voltage V 5 V DC Table5.FunctionalPinDescription Pin V V BA N.C. CC Name Number Description 16 15 14 N.C. 1 13 N.C. RF 3,4 RFinputforthepoweramplifier.This pinis DC--coupledand in N.C.212 RF /V requires aDC--blockingseries capacitor. out CC RF / 10,11,12 RFoutputforthepoweramplifier.This pinis DC--coupled RF RF /V out in311 out CC V andrequires aDC--blockingseries capacitor. CC RF RF /V 410 in out CC V 14 Collectorvoltagesupply. CC N.C.59 N.C. 67 8 V 16 Bias voltagesupply. BA N.C. N.C. N.C. GND Backside ThecentermetalbaseofthePQFNpackageprovides both Center DCandRFgroundas wellas heatsink contactforthe (TopView) Metal poweramplifier. Figure1.PinConnections Table6.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1A MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C MMG3005NT1 RF DeviceData FreescaleSemiconductor 2