DocumentNumber:MMG3015NT1 FreescaleSemiconductor Rev. 4, 9/2014 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) MMG3015NT1 BroadbandHighLinearity Amplifier The MMG3015NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-- signal,highlinearity,generalpurposeapplications.Itissuitablefor applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. 0--6000MHz, 15.5dB 20.5dBm Features InGaPHBTGPA Frequency: 0--6000 MHz P1dB: 20.5dBm 900MHz Small--Signal Gain: 15.5 dB 900 MHz ThirdOrder Output Intercept Point: 36dBm 900MHz Single 5 V Supply ActiveBias Control Internally Matchedto50Ohms SOT--89 Cost--effectiveSOT--89SurfaceMount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2. MaximumRatings 900 2140 3500 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 7 V CC Small--SignalGain G 15.5 14.5 12.5 dB p Supply Current I 300 mA CC (S21) RFInput Power P 12 dBm in Input Return Loss IRL --15 --19 --19 dB Storage Temperature Range T --65to+150 C (S11) stg Junction Temperature T 175 C Output Return Loss ORL --13 --9 --7 dB J (S22) PowerOutput 1dB P1dB 20.5 20.5 18.5 dBm Compression Third OrderOutput OIP3 36 33.5 30.5 dBm Intercept Point 1. V =5Vdc,T =25 C, 50ohm system. CC A Table3. Thermal Characteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 41.5 C/W JC Case Temperature 95C, 5 Vdc, 95 mA, no RFapplied 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4. Electrical Characteristics (V =5Vdc,900MHz,T =25 C, 50ohm system, inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 14 15.5 dB p Input Return Loss (S11) IRL --15 dB Output Return Loss (S22) ORL --13 dB PowerOutput 1dB Compression P1dB 20.5 dBm Third OrderOutput Intercept Point OIP3 36 dBm Noise Figure NF 5.6 dB Supply Current I 80 95 120 mA CC Supply Voltage V 5 V CC Table5.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram Table6. ESD Protection Characteristics TestMethodology Class Human Body Model(perJESD22--A114) 1C MachineModel(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table7. MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C MMG3015NT1 RF DeviceData Freescale Semiconductor, Inc. 2