DocumentNumber:MML20211H FreescaleSemiconductor Rev. 1, 9/2014 Technical Data EnhancementModepHEMT Technology(E--pHEMT) Low Noise Amplifier MML20211HT1 The MML20211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for arangeoflow noise,highlinearity applications suchas picocell, femtocell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 1400to2800MHz suchas TD--SCDMA, W--CDMA, UMTS, PCS, LTEandBWA. 1400--2800MHz,18.6dB 21.3dBm Features E--pHEMTLNA Ultra Low Noise Figure: 0.65 dB 2140 MHz Frequency: 1400--2800 MHz High Reverse Isolation: --35 dB 2140 MHz P1dB: 21.3 dBm 2140 MHz Small--Signal Gain: 18.6 dB 2140 MHz (adjustable externally) Third Order Output Intercept Point: 33 dBm 2140 MHz Active Bias Control (adjustable externally) Single 5 V Supply Supply Current: 60 mA DFN2 2 50 Ohm Operation (some external matching required) Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2.MaximumRatings 1400 1800 2140 2700 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz MHz Unit Supply Voltage V 6 V DD (2) Noise Figure NF 0.65 0.65 0.65 0.85 dB Supply Current I 200 mA DD Input Return IRL --19.5 --16 --16.7 --17.3 dB RF Input Power P 22 dBm Loss (S11) in Output Return ORL --24.9 --28 --26.6 --20 dB Storage Temperature Range T --65to+150 C stg Loss (S22) Junction Temperature T 175 C J Small--Signal G 21.3 19.7 18.6 18.1 dB p Gain (S21) Power Output P1dB 21.1 21.1 21.3 19.6 dBm 1dB Compression Third Order IIP3 10.8 12.5 14.4 14.9 dBm Input Intercept Point Third Order OIP3 32.1 32.2 33 33 dBm Output InterceptPoint 1. V =5Vdc,T =25 C, 50 ohm system, application circuit DD A tuned for specified frequency. 2. Noise figure value calculated with connector losses removed. Table3.ThermalCharacteristics (3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 43.4 C/W JC Case Temperature 87C, 5 Vdc, I =60 mA, no RF applied DD 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =5 Vdc, 2140 MHz, T =25 C, 50 ohm system, in Freescale Application Circuit) DD A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 15 18.6 dB p Input Return Loss (S11) IRL --16.7 dB Output Return Loss (S22) ORL --26.6 dB Power Output 1dB Compression P1dB 21.3 dBm Third Order Input Intercept Point IIP3 14.4 dBm Third Order Output Intercept Point OIP3 33 dBm Reverse Isolation (S12) S12 --35 dB (1) Noise Figure NF 0.65 dB (2) Supply Current I 45 60 85 mA DD Supply Voltage V 5 V DD 1. Noise figure value calculated with connector losses removed. 2. DC current measured with no RF signalapplied. Table5.FunctionalPinDescription Pin Number PinFunction 18 N.C. 1 RF RF in in 2 RF RF27 RF in in out GND 3 RF Input Matching Termination RF RF 36 MATCH out 4 Bias Voltage DC Supply V 4 5 FB BIAS 5 RF Feedback (TopView) 6 RF /DC Supply out 7 RF /DC Supply out Figure1.PinConnections 8 No Connection Table6.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JESD22--A114) 0 Machine Model(per EIA/JESD22--A115) A Charge Device Model(per JESD22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C MML20211HT1 RF DeviceData Freescale Semiconductor 2