X-On Electronics has gained recognition as a prominent supplier of BGB707L7ESDE6327XTSA1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. BGB707L7ESDE6327XTSA1 RF Amplifier are a product manufactured by Infineon. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

BGB707L7ESDE6327XTSA1 Infineon

BGB707L7ESDE6327XTSA1 electronic component of Infineon
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Part No.BGB707L7ESDE6327XTSA1
Manufacturer: Infineon
Category: RF Amplifier
Description: RF Amp Chip Single GP 10GHz 4V 6-Pin TSLP EP T/R
Datasheet: BGB707L7ESDE6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.847 ea
Line Total: USD 0.85 
Availability - 8917
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
573
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5344

557
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8445
10 : USD 0.7355
25 : USD 0.7309
100 : USD 0.6712
250 : USD 0.6646
500 : USD 0.6024

301
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.12
10 : USD 0.9167
30 : USD 0.8152
100 : USD 0.7154
500 : USD 0.6539
1000 : USD 0.6233

8917
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.847
10 : USD 0.7062
100 : USD 0.6325
500 : USD 0.6094
1000 : USD 0.5962
2500 : USD 0.5357
7500 : USD 0.5038

14442
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 70
Multiples : 1
70 : USD 0.5834
100 : USD 0.5817
500 : USD 0.5785

573
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 14
Multiples : 1
14 : USD 0.5344

557
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 13
Multiples : 1
13 : USD 0.6024

   
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We are delighted to provide the BGB707L7ESDE6327XTSA1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGB707L7ESDE6327XTSA1 and other electronic components in the RF Amplifier category and beyond.

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BGB707L7ESD General purpose LNA MMIC with integrated ESD protection and active biasing Product description The BGB707L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineons silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure NF = 0.6 dB at 2.4 GHz, 3 V, 3 mA min Supply voltage V = 1.8 V to 4.0 V at T = 25 C CC A Integrated ESD protection: 2 kV HBM at all pins Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA ISM applications like RKE and smart meter, as well as for emerging wireless applications such as DVB- Terrestrial Device information Table 1 Part information Product name / Package Pin configuration Marking Pieces / Reel Ordering code BGB707L7ESD / TSLP-7-1 1 = V 2 = V 3 = RF 4 = RF AZ 7500 CC Bias in out BGB707L7ESDE6327XTSA1 5 = V 6 = Current 7 = Ground Ctrl adjust Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v4.0 www.infineon.com 2018-09-26BGB707L7ESD General purpose LNA MMIC with integrated ESD protection and active biasing Functional block diagram Functional block diagram This functional block diagram explains how the BGB707L7ESD is used. The RF power on/off function is controlled by applying V . By using an external resistor R , the pre-set current of 2.1 mA (when R is Ctrl ext ext omitted) can be increased. Base V and collector V voltages are applied to the respective pins RF and RF by B C in out external inductors L and L . B C DC, R ext V CC 6 5 4 1 6 internal V Current Adjust CC Biasing 2 5 7 LB Bias-Out On/Off In LC Out DC, 3 4 V ctrl RF-In RF-Out C C 1 2 3 in out GND 7 (on package backside) BGB7XXL7ESD functional block Figure 1 Functional block diagram Datasheet 2 v4.0 2018-09-26

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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Monolithic integrated circuits:
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
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INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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