BGB707L7ESD General purpose LNA MMIC with integrated ESD protection and active biasing Product description The BGB707L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineons silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure NF = 0.6 dB at 2.4 GHz, 3 V, 3 mA min Supply voltage V = 1.8 V to 4.0 V at T = 25 C CC A Integrated ESD protection: 2 kV HBM at all pins Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA ISM applications like RKE and smart meter, as well as for emerging wireless applications such as DVB- Terrestrial Device information Table 1 Part information Product name / Package Pin configuration Marking Pieces / Reel Ordering code BGB707L7ESD / TSLP-7-1 1 = V 2 = V 3 = RF 4 = RF AZ 7500 CC Bias in out BGB707L7ESDE6327XTSA1 5 = V 6 = Current 7 = Ground Ctrl adjust Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v4.0 www.infineon.com 2018-09-26BGB707L7ESD General purpose LNA MMIC with integrated ESD protection and active biasing Functional block diagram Functional block diagram This functional block diagram explains how the BGB707L7ESD is used. The RF power on/off function is controlled by applying V . By using an external resistor R , the pre-set current of 2.1 mA (when R is Ctrl ext ext omitted) can be increased. Base V and collector V voltages are applied to the respective pins RF and RF by B C in out external inductors L and L . B C DC, R ext V CC 6 5 4 1 6 internal V Current Adjust CC Biasing 2 5 7 LB Bias-Out On/Off In LC Out DC, 3 4 V ctrl RF-In RF-Out C C 1 2 3 in out GND 7 (on package backside) BGB7XXL7ESD functional block Figure 1 Functional block diagram Datasheet 2 v4.0 2018-09-26