DocumentNumber:MML20242H FreescaleSemiconductor Rev. 2, 9/2014 Technical Data EnhancementModepHEMT Technology(E--pHEMT) MML20242HT1 Low Noise Amplifier The MML20242H is a 2--stage low noise amplifier (LNA) with active bias andhighisolationfor useincellularinfrastructureapplications.It isdesigned forarangeoflownoise,highlinearityapplicationssuchaspicocell, femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It 1400--2800MHz,34dB 24dBm,0.59dBNF operates from a single voltage supply and is suitable for applications with E--pHEMTLNA frequencies from1400to2800MHz suchas TD--SCDMA, W--CDMA, UMTS, PCS, LTE and BWA. Features Low Noise Figure: 0.59 dB 1950 MHz Frequency: 1400--2800 MHz Unconditionally Stable over Temperature High Reverse Isolation: --51 dB 1950 MHz QFN3 3 P1dB: 24 dBm 1950 MHz Small--Signal Gain: 34 dB 1950 MHz Third Order Output Intercept Point: 39.5 dBm 1950 MHz Active Bias Control (adjustable externally) Single 5 V Supply Supply Current: 160 mA 50 Ohm Operation (some external matching required) Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2.MaximumRatings 1400 1950 2800 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 6 V DD (2) Noise Figure NF 0.55 0.59 0.97 dB Supply Current I 300 mA DD Input Return Loss IRL --15 --18 --18 dB (3) RF Input Power P 28 dBm in (S11) Storage Temperature Range T --65to+150 C stg Output Return Loss ORL --14 --15 --15 dB (S22) Junction Temperature T 175 C J Small--SignalGain G 38 34 31.5 dB 3. Measured using CW test signal. p (S21) Power Output P1dB 23.5 24 24 dBm 1dB Compression Third Order Input IIP3 1 5.5 8 dBm Intercept Point Third Order Output OIP3 39 39.5 39.5 dBm Intercept Point 1. V =5Vdc,T =25 C, 50 ohm system, application circuit DD A tuned for specified frequency. 2. Noise figure value calculated with connector losses removed. Table3.ThermalCharacteristics (4) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 40 C/W JC Case Temperature 95C, 5 Vdc, 163 mA, no RF applied 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4.ElectricalCharacteristics (V =5 Vdc, 2140 MHz, T =25 C, 50 ohm system, in Freescale Application Circuit) DD A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 30.6 32.5 dB p Input Return Loss (S11) IRL --18 dB Output Return Loss (S22) ORL --15 dB Power Output 1dB Compression P1dB 24 dBm Third Order Input Intercept Point IIP3 7 dBm Third Order Output Intercept Point OIP3 39.5 dBm Reverse Isolation (S12) S12 --50 dBm (1) Noise Figure NF 0.7 dB (2) Supply Current I 117 160 207 mA DD Supply Voltage V 5 V DD Table5.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JESD22--A114) 0 Machine Model(per EIA/JESD22--A115) A Charge Device Model(per JESD22--C101) IV Table6.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C 1. Noise figure value calculated with connector losses removed. 2. DC current measured with no RF signalapplied. RF Feedback V DD1 RF FB N.C. V DD1 12 11 10 RF MATCH RF 19 MATCH N.C. RF 28GND V /RF in DD2 out RF V /RF in DD2 out RF37 N.C. in 45 6 RF in BIAS BIAS V N.C. V BA1 BA2 CIRCUIT CIRCUIT Note:Exposedbacksideofthepackageis DCandRF ground. V V BA1 BA2 Figure1.FunctionalBlockDiagram Figure2.PinConnections MML20242HT1 RF Device Data Freescale Semiconductor, Inc. 2