DocumentNumber:MMG3012NT1 FreescaleSemiconductor Rev. 8, 9/2014 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) Broadband High Linearity Amplifier MMG3012NT1 The MMG3012NT1is ageneral purposeamplifier that is internally input matched and internally output matched. It is designed for a broad range of ClassA,small--signal,highlinearity,generalpurposeapplications.Itis suitableforapplicationswithfrequenciesfrom0to6000MHzsuchas cellular,PCS,BWA,WLL,PHS,CATV,VHF,UHF,UMTSandgeneral 0--6000MHz, 19dB small--signal RF. 18.5dBm InGaPHBTGPA Features Frequency: 0--6000 MHz P1dB: 18.5 dBm 900 MHz Small--Signal Gain: 19 dB 900 MHz Third Order Output Intercept Point: 34 dBm 900 MHz Single 5 V Supply Internally Matched to 50 Ohms Cost--effective SOT--89 Surface Mount Plastic Package SOT--89 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. (1) Table1.TypicalPerformance Table2. MaximumRatings 900 2140 3500 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 7 V CC Small--SignalGain G 19 15.8 13.4 dB p Supply Current I 300 mA CC (S21) RF Input Power P 25 dBm in Input Return Loss IRL --18 --20 --17 dB Storage Temperature Range T --65to+150 C (S11) stg Junction Temperature T 175 C Output Return Loss ORL --18 --12 --16 dB J (S22) Power Output 1dB P1dB 18.5 19 18 dBm Compression Third Order Output OIP3 34 32 31 dBm Intercept Point 1. V =5Vdc,T =25 C, 50 ohm system. CC A Table3. Thermal Characteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 85 C/W JC Case Temperature 88C, 5 Vdc, 70 mA, no RF applied 2. Refer to AN1955, ThermalMeasurement Methodology of RFPowerAmplifiers. Go to Table4. Electrical Characteristics (V =5 Vdc, 900 MHz, T =25 C, 50 ohm system, in Freescale Application Circuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 17.5 19 dB p Input Return Loss (S11) IRL --18 dB Output Return Loss (S22) ORL --18 dB Power Output 1dB Compression P1dB 18.5 dBm Third Order Output Intercept Point OIP3 34 dBm Noise Figure NF 3.8 dB Supply Current I 58 70 82 mA CC Supply Voltage V 5 V CC Table5.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram Table6. ESD Protection Characteristics TestMethodology Class Human Body Model(per JESD 22--A114) 1A Machine Model(per EIA/JESD 22--A115) A Charge Device Model(per JESD 22--C101) IV Table7. MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD 22--A113, IPC/JEDEC J--STD--020 1 260 C MMG3012NT1 RF DeviceData Freescale Semiconductor, Inc. 2