X-On Electronics has gained recognition as a prominent supplier of MMG3003NT1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MMG3003NT1 RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MMG3003NT1 NXP

MMG3003NT1 electronic component of NXP
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See Product Specifications
Part No.MMG3003NT1
Manufacturer: NXP
Category: RF Amplifier
Description: RF Amplifier 20DB 24DBM GEN PURP AMP
Datasheet: MMG3003NT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1
1000 : USD 4.4181
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.3227
10 : USD 4.7905
25 : USD 4.3043
50 : USD 4.0969
100 : USD 3.9253
250 : USD 3.5392
500 : USD 3.2041
1000 : USD 2.7751
2000 : USD 2.6411
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Type
Operating Frequency
Gain
NF - Noise Figure
OIP3 - Third Order Intercept
Maximum Operating Temperature
Operating Supply Current
Qualification
Packaging
Series
Test Frequency
Brand
Number Of Channels
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMG3003NT1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMG3003NT1 and other electronic components in the RF Amplifier category and beyond.

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DocumentNumber:MMG3003NT1 FreescaleSemiconductor Rev. 9, 9/2014 Technical Data HeterojunctionBipolarTransistor Technology(InGaPHBT) MMG3003NT1 BroadbandHighLinearity Amplifier The MMG3003NT1is ageneral purposeamplifier thatis internally input matched and internally output prematched. It is designed for a broad range ofClassA, small--signal,highlinearity,generalpurposeapplications. Itis suitableforapplications withfrequencies from40to3600MHz suchas cellular,PCS,BWA,WLL,PHS,CATV,VHF,UHF,UMTSandgeneral 40--3600MHz, 20dB small--signal RF. 24dBm Features InGaPHBTGPA Frequency: 40--3600 MHz P1dB: 24dBm 900MHz Small--Signal Gain: 20 dB 900 MHz ThirdOrder Output Intercept Point: 40.5dBm 900MHz Single Voltage Supply Internally Matchedto50Ohms Cost--effectiveSOT--89SurfaceMount Plastic Package In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. SOT--89 (1) Table1.TypicalPerformance Table2. MaximumRatings 900 2140 3500 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz Unit Supply Voltage V 7 V CC Small--SignalGain G 20 16.9 12 dB p Supply Current I 400 mA CC (S21) RFInput Power P 15 dBm in Input Return Loss IRL --15 --14.1 --11.2 dB Storage Temperature Range T --65to+150 C (S11) stg Junction Temperature T 175 C Output Return Loss ORL --9.3 --14.5 --10.2 dB J (S22) PowerOutput 1dB P1dB 24 23.3 20.5 dBm Compression Third OrderOutput OIP3 40.5 40 37 dBm Intercept Point 1. V =6.2Vdc,T =25 C, 50ohm system. CC A Table3. Thermal Characteristics (2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 31.6 C/W JC Case Temperature 109C, 6.2 Vdc, 180 mA, no RFapplied 2. Referto AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table4. Electrical Characteristics (V =6.2Vdc,900MHz,T =25 C, 50ohm system, inFreescaleApplicationCircuit) CC A Characteristic Symbol Min Typ Max Unit Small--SignalGain (S21) G 19.3 20 dB p Input Return Loss (S11) IRL --15 dB Output Return Loss (S22) ORL --9.3 dB PowerOutput 1dB Compression P1dB 24 dBm Third OrderOutput Intercept Point OIP3 40.5 dBm Noise Figure NF 4 dB Supply Current I 160 180 205 mA CC Supply Voltage V 6.2 V CC Table5.FunctionalPinDescription 2 Pin Number PinFunction 1 RF in 2 Ground 3 RF /DC Supply out 1 2 3 Figure1.FunctionalDiagram Table6. ESD Protection Characteristics TestConditions/TestMethodology Class Human Body Model(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table7. MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 1 260 C MMG3003NT1 RF DeviceData Freescale Semiconductor, Inc. 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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